公开(公告)号：US11587882B2

公开(公告)日：2023-02-21

申请号：US17163776

申请日：2021-02-01

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  HunTeak Lee ,  HeeSoo Lee ,  Wanil Lee ,  SangDuk Lee

IPC: H01L23/552 ,  H01L23/31 ,  H01L21/56 ,  H01L23/66

Abstract: A semiconductor device has a substrate comprising a carrier and an interposer disposed on the carrier. An electrical component is disposed over a first surface of the interposer. An interconnect structure is disposed over the first surface of the interposer. An encapsulant is deposited over the electrical component, interconnect structure, and substrate. A trench is formed through the encapsulant and interposer into the carrier. A shielding layer is formed over the encapsulant and into the trench. The carrier is removed after forming the shielding layer.

公开(公告)号：US20210151386A1

公开(公告)日：2021-05-20

申请号：US17163776

申请日：2021-02-01

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  HunTeak Lee ,  HeeSoo Lee ,  Wanil Lee ,  SangDuk Lee

IPC: H01L23/552 ,  H01L23/31 ,  H01L21/56 ,  H01L23/66

Abstract: A semiconductor device has a substrate comprising a carrier and an interposer disposed on the carrier. An electrical component is disposed over a first surface of the interposer. An interconnect structure is disposed over the first surface of the interposer. An encapsulant is deposited over the electrical component, interconnect structure, and substrate. A trench is formed through the encapsulant and interposer into the carrier. A shielding layer is formed over the encapsulant and into the trench. The carrier is removed after forming the shielding layer.

公开(公告)号：US20230154864A1

公开(公告)日：2023-05-18

申请号：US18155878

申请日：2023-01-18

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  HunTeak Lee ,  HeeSoo Lee ,  Wanil Lee ,  SangDuk Lee

IPC: H01L23/552 ,  H01L23/31 ,  H01L21/56 ,  H01L23/66

CPC classification number: H01L23/552 ,  H01L23/3107 ,  H01L21/568 ,  H01L23/66 ,  H01L2223/6677

Abstract: A semiconductor device has a substrate comprising a carrier and an interposer disposed on the carrier. An electrical component is disposed over a first surface of the interposer. An interconnect structure is disposed over the first surface of the interposer. An encapsulant is deposited over the electrical component, interconnect structure, and substrate. A trench is formed through the encapsulant and interposer into the carrier. A shielding layer is formed over the encapsulant and into the trench. The carrier is removed after forming the shielding layer.

公开(公告)号：US20200161252A1

公开(公告)日：2020-05-21

申请号：US16193691

申请日：2018-11-16

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  HunTeak Lee ,  HeeSoo Lee ,  Wanil Lee ,  SangDuk Lee

IPC: H01L23/552 ,  H01L23/31 ,  H01L23/66 ,  H01L21/56

Abstract: A semiconductor device has a substrate comprising a carrier and an interposer disposed on the carrier. An electrical component is disposed over a first surface of the interposer. An interconnect structure is disposed over the first surface of the interposer. An encapsulant is deposited over the electrical component, interconnect structure, and substrate. A trench is formed through the encapsulant and interposer into the carrier. A shielding layer is formed over the encapsulant and into the trench. The carrier is removed after forming the shielding layer.

公开(公告)号：US12266614B2

公开(公告)日：2025-04-01

申请号：US18155878

申请日：2023-01-18

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  HunTeak Lee ,  HeeSoo Lee ,  Wanil Lee ,  SangDuk Lee

IPC: H01L23/552 ,  H01L21/56 ,  H01L23/31 ,  H01L23/66

Abstract: A semiconductor device has a substrate comprising a carrier and an interposer disposed on the carrier. An electrical component is disposed over a first surface of the interposer. An interconnect structure is disposed over the first surface of the interposer. An encapsulant is deposited over the electrical component, interconnect structure, and substrate. A trench is formed through the encapsulant and interposer into the carrier. A shielding layer is formed over the encapsulant and into the trench. The carrier is removed after forming the shielding layer.

公开(公告)号：US10937741B2

公开(公告)日：2021-03-02

申请号：US16193691

申请日：2018-11-16

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： DeokKyung Yang ,  HunTeak Lee ,  HeeSoo Lee ,  Wanil Lee ,  SangDuk Lee

IPC: H01L23/552 ,  H01L23/31 ,  H01L21/56 ,  H01L23/66

Abstract: A semiconductor device has a substrate comprising a carrier and an interposer disposed on the carrier. An electrical component is disposed over a first surface of the interposer. An interconnect structure is disposed over the first surface of the interposer. An encapsulant is deposited over the electrical component, interconnect structure, and substrate. A trench is formed through the encapsulant and interposer into the carrier. A shielding layer is formed over the encapsulant and into the trench. The carrier is removed after forming the shielding layer.