公开(公告)号：US20160079075A1

公开(公告)日：2016-03-17

申请号：US14785819

申请日：2014-04-24

Applicant: STC. UNM

Inventor： Zayd LESEMAN ,  Khawar ABBAS ,  Joseph BUTNER ,  Mirza ELAHI ,  Denise PINON

IPC: H01L21/3065 ,  H01L21/66 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01L21/30655 ,  H01L21/67069 ,  H01L21/67253 ,  H01L22/26

Abstract: A method for determining depletion of an etchant, an etch depth, and an etch rate during an etch of a material such as Si using an etchant such as xenon difluoride (XeF2) in a pulsed etching system in real time measuring pressure within a closed system during the etch. Coupling the pressure data with the knowledge of the chemical reactions allows for the determination of the etching parameters of interest. While the etch of Si using XeF2 is used for demonstration, the method may be generalized to any closed volume system provided there is a net change in number of moles of gaseous species present in the system before and after the reaction.

Abstract translation: 在脉冲蚀刻系统中使用诸如氙二氟化物（XeF2）的蚀刻剂蚀刻诸如Si之类的材料的蚀刻深度和蚀刻速率的方法，用于实时测量封闭系统内的压力的方法 在蚀刻期间。 将压力数据与化学反应的知识结合允许确定感兴趣的蚀刻参数。 虽然使用XeF2对Si的蚀刻用于示范，但是如果在反应之前和之后系统中存在的气态物质的摩尔数存在净变化，则该方法可以推广到任何封闭体积系统。