公开(公告)号：US09437498B2

公开(公告)日：2016-09-06

申请号：US14636778

申请日：2015-03-03

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Stéphane Zoll ,  Philippe Garnier ,  Olivier Gourhant ,  Vincent Joseph

IPC: H01L21/3205 ,  H01L21/8234 ,  H01L29/49 ,  H01L21/324 ,  H01L21/033 ,  H01L21/28

CPC classification number: H01L21/823437 ,  H01L21/0332 ,  H01L21/28088 ,  H01L21/324 ,  H01L29/4966

Abstract: A method is for forming at least two different gates metal regions of at least two MOS transistors. The method may include forming a metal layer on a gate dielectric layer; and forming a metal hard mask on the metal layer, with the hard mask having a composition different from that of the metal layer and covering a first region of the metal layer and leaving open a second region of the metal layer. The method may also include diffusion annealing the intermediate structure obtained in the prior steps such as to make the metal atoms of the hard mask diffuse into the first region, and removal of the hard mask.

Abstract translation: 一种方法是形成至少两个MOS晶体管的至少两个不同的栅极金属区域。 该方法可以包括在栅介质层上形成金属层; 以及在所述金属层上形成金属硬掩模，所述硬掩模具有不同于所述金属层的组成，并且覆盖所述金属层的第一区域并且留下所述金属层的第二区域。 该方法还可以包括对先前步骤中获得的中间结构进行扩散退火，以使硬掩模的金属原子扩散到第一区域中，以及去除硬掩模。