公开(公告)号：US12035643B2

公开(公告)日：2024-07-09

申请号：US17488026

申请日：2021-09-28

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Yann Canvel ,  Sebastien Lagrasta ,  Sebastien Barnola ,  Christelle Boixaderas

IPC: H10N70/00 ,  H10N70/20

CPC classification number: H10N70/063 ,  H10N70/231 ,  H10N70/826 ,  H10N70/8413 ,  H10N70/8828

Abstract: The disclosure concerns an electronic component manufacturing method including a first step of etching at least one first layer followed, with no exposure to oxygen, by a second step of passivating the first layer.

公开(公告)号：US20200098989A1

公开(公告)日：2020-03-26

申请号：US16578022

申请日：2019-09-20

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Yann Canvel ,  Sebastien Lagrasta ,  Sebastien Barnola ,  Christelle Boixaderas

IPC: H01L45/00

Abstract: The disclosure concerns an electronic component manufacturing method including a first step of etching at least one first layer followed, with no exposure to oxygen, by a second step of passivating the first layer.