公开(公告)号：US20130114340A1

公开(公告)日：2013-05-09

申请号：US13668448

申请日：2012-11-05

Applicant: STMICROELECTRONICS (ROUSSET) SAS

Inventor： FRANCOIS TAILLIET

IPC: G11C16/10

CPC classification number: G11C16/10 ,  G06F11/167 ,  G06F11/20 ,  G11C16/26 ,  G11C16/3404 ,  G11C16/3495 ,  G11C29/74

Abstract: A method for managing a non-volatile memory may include a first phase of writing data to a first bank of a memory plane of the non-volatile memory, and then a second phase of writing the same data to a second bank of the same memory plane of the non-volatile memory in the case of success of the first writing phase.