公开(公告)号：US09524866B2

公开(公告)日：2016-12-20

申请号：US14957141

申请日：2015-12-02

Applicant: STMICROELECTRONICS PTE LTD

Inventor： Chong Jieh Chew

IPC: H01L21/76 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L21/02252 ,  H01L21/02129 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/02334 ,  H01L21/0234 ,  H01L21/033 ,  H01L21/31144

Abstract: A method for making semiconductor devices may include forming a phosphosilicate glass (PSG) layer on a semiconductor wafer, with the PSG layer having a phosphine residual surface portion. The method may further include exposing the phosphine residual surface portion to a reactant plasma to integrate at least some of the phosphine residual surface portion into the PSG layer. The method may additionally include forming a mask layer on the PSG layer after the exposing.