公开(公告)号：US20040187778A1

公开(公告)日：2004-09-30

申请号：US10720838

申请日：2003-11-24

Applicant: STMICROELECTRONICS S.A.

Inventor： Mickael Gros-Jean ,  Nicolas Jourdan ,  Jean Michailos

IPC: C23C016/00

CPC classification number: H01L21/02183 ,  C23C16/405 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/31604

Abstract: Carrier material (PL) is heated (MCH) to a heating temperature of between 200null C. and 400null C. and a gas mixture (MG) including tert-butyliminotris (diethylamino) tantalum (t-BuNnullTa(NEt2)3) is circulated in contact with the heated carrier material under an oxidizing atmosphere thereby forming a layer of tantalum pentoxide (Ta2O5) on the carrier material. The partial pressure of the tert-butyliminotris (diethylamino) tantalum is preferably greater than or equal to 25 mTorr.

Abstract translation: 将载体材料（PL）加热（MCH）至200℃至400℃的加热温度和包含叔丁基亚氨基三（二乙基氨基）钽（t-BuN = Ta（NEt2）3）的气体混合物 ）在氧化气氛下与加热的载体材料接触循环，从而在载体材料上形成五氧化二钽（Ta 2 O 5）层。 叔丁基亚氨基三（二乙基氨基）钽的分压优选大于或等于25mTorr。