公开(公告)号：US09911869B2

公开(公告)日：2018-03-06

申请号：US15250645

申请日：2016-08-29

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marco Sambi ,  Dario Ripamonti ,  Davide Ugo Ghisu ,  Dario Bianchi

IPC: H01L29/861 ,  H01L29/06 ,  H01L27/06

CPC classification number: H01L29/861 ,  H01L21/76 ,  H01L27/0629 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/8611

Abstract: A diode comprising a semiconductor body delimited by a front surface and including: a first semiconductor region having a first type of conductivity, facing at least in part the front surface; and a second semiconductor region having a second type of conductivity, the second semiconductor region facing at least in part the front surface and surrounding, at a distance, at least part of the first semiconductor region. The diode further includes: a trench, which extends in the semiconductor body starting from the front surface, for surrounding at least part of the second semiconductor region; and a lateral insulation region, which is arranged within the trench, is formed by dielectric material and contacts at least in part the second semiconductor region.

公开(公告)号：US20170263784A1

公开(公告)日：2017-09-14

申请号：US15250645

申请日：2016-08-29

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marco Sambi ,  Dario Ripamonti ,  Davide Ugo Ghisu ,  Dario Bianchi

IPC: H01L29/861 ,  H01L27/06 ,  H01L29/06

CPC classification number: H01L29/861 ,  H01L21/76 ,  H01L27/0629 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/8611

Abstract: A diode comprising a semiconductor body delimited by a front surface and including: a first semiconductor region having a first type of conductivity, facing at least in part the front surface; and a second semiconductor region having a second type of conductivity, the second semiconductor region facing at least in part the front surface and surrounding, at a distance, at least part of the first semiconductor region. The diode further includes: a trench, which extends in the semiconductor body starting from the front surface, for surrounding at least part of the second semiconductor region; and a lateral insulation region, which is arranged within the trench, is formed by dielectric material and contacts at least in part the second semiconductor region.