公开(公告)号：US10062798B2

公开(公告)日：2018-08-28

申请号：US15479034

申请日：2017-04-04

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto ,  Dario Sutera

IPC: H01L31/101 ,  H01L31/108 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/11 ,  H01L31/18

CPC classification number: H01L31/1013 ,  H01L31/022416 ,  H01L31/028 ,  H01L31/035272 ,  H01L31/108 ,  H01L31/11 ,  H01L31/1812

Abstract: A photodiode structure is based on the use of a double junction sensitive to different wavelength bands based on a magnitude of a reverse bias applied to the photodiode. The monolithic integration of a sensor with double functionality in a single chip allows realization of a low cost ultra-compact sensing element in a single packaging useful in many applications which require simultaneous or spatially synchronized detection of optical photons in different spectral regions.

公开(公告)号：US10461209B2

公开(公告)日：2019-10-29

申请号：US15140880

申请日：2016-04-28

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto ,  Dario Sutera

IPC: H01L31/107 ,  H01L31/0224 ,  H01L31/18

Abstract: An avalanche photodiode for detecting ultraviolet radiation, including: a silicon carbide body having a first type of conductivity, which is delimited by a front surface and forms a cathode region; an anode region having a second type of conductivity, which extends into the body starting from the front surface and contacts the cathode region; and a guard ring having the second type of conductivity, which extends into the body starting from the front surface and surrounds the anode region.

公开(公告)号：US09685575B2

公开(公告)日：2017-06-20

申请号：US14640663

申请日：2015-03-06

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto ,  Dario Sutera

IPC: H01L31/101 ,  H01L31/108

CPC classification number: H01L31/1013 ,  H01L31/022416 ,  H01L31/028 ,  H01L31/035272 ,  H01L31/108 ,  H01L31/11 ,  H01L31/1812

Abstract: A photodiode structure is based on the use of a double junction sensitive to different wavelength bands based on a magnitude of a reverse bias applied to the photodiode. The monolithic integration of a sensor with double functionality in a single chip allows realization of a low cost ultra-compact sensing element in a single packaging useful in many applications which require simultaneous or spatially synchronized detection of optical photons in different spectral regions.

公开(公告)号：US20200013915A1

公开(公告)日：2020-01-09

申请号：US16573941

申请日：2019-09-17

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto ,  Dario Sutera

IPC: H01L31/107 ,  H01L31/0224 ,  H01L31/18

Abstract: An avalanche photodiode for detecting ultraviolet radiation, including: a silicon carbide body having a first type of conductivity, which is delimited by a front surface and forms a cathode region; an anode region having a second type of conductivity, which extends into the body starting from the front surface and contacts the cathode region; and a guard ring having the second type of conductivity, which extends into the body starting from the front surface and surrounds the anode region.

公开(公告)号：US20170098730A1

公开(公告)日：2017-04-06

申请号：US15140880

申请日：2016-04-28

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto ,  Dario Sutera

IPC: H01L31/107 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/107 ,  H01L31/022416 ,  H01L31/18

Abstract: An avalanche photodiode for detecting ultraviolet radiation, including: a silicon carbide body having a first type of conductivity, which is delimited by a front surface and forms a cathode region; an anode region having a second type of conductivity, which extends into the body starting from the front surface and contacts the cathode region; and a guard ring having the second type of conductivity, which extends into the body starting from the front surface and surrounds the anode region.

公开(公告)号：US11670730B2

公开(公告)日：2023-06-06

申请号：US16573941

申请日：2019-09-17

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Antonella Sciuto ,  Dario Sutera

IPC: H01L31/107 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/107 ,  H01L31/022416 ,  H01L31/18

Abstract: An avalanche photodiode for detecting ultraviolet radiation, including: a silicon carbide body having a first type of conductivity, which is delimited by a front surface and forms a cathode region; an anode region having a second type of conductivity, which extends into the body starting from the front surface and contacts the cathode region; and a guard ring having the second type of conductivity, which extends into the body starting from the front surface and surrounds the anode region.

公开(公告)号：US09581620B2

公开(公告)日：2017-02-28

申请号：US14615196

申请日：2015-02-05

Applicant: STMicroelectronics S.r.l.

Inventor： Dario Sutera ,  Davide Giuseppe Patti ,  Valeria Cinnera Martino

IPC: G01R15/20 ,  G01R15/18 ,  G01R19/00 ,  G01R33/07

CPC classification number: G01R15/202 ,  G01R15/18 ,  G01R15/207 ,  G01R19/0092 ,  G01R33/07

Abstract: The semiconductor integrated device has a conductive region, for example, an external contact pad, configured to be traversed by a current to be measured. A concentrator of magnetic material partially surrounds the conductive region and has an annular shape open at a point defining an air gap area where a sensitive region is arranged, which is electrically conductive and is typically of doped semiconductor material, such as polycrystalline silicon. The device is integrated in a chip formed by a substrate and by an insulating layer, the sensitive region and the concentrator being formed in the insulating layer.

Abstract translation: 半导体集成器件具有导电区域，例如外部接触焊盘，被配置为被被测量的电流穿过。 磁性材料的集中器部分地围绕导电区域并且具有在限定气隙区域的位置处的环形形状，其中布置有敏感区域，该敏感区域是导电的并且通常是掺杂半导体材料，例如多晶硅。 该器件集成在由衬底形成的芯片和绝缘层中，敏感区域和集中器形成在绝缘层中。