公开(公告)号：US20130149838A1

公开(公告)日：2013-06-13

申请号：US13749526

申请日：2013-01-24

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Mario Giuseppe Saggio ,  Domenico Murabito ,  Letterio Fiore ,  Giuseppe Morale

IPC: H01L21/762

CPC classification number: H01L21/762 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3247 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/1095 ,  H01L29/42376 ,  H01L29/66348 ,  H01L29/66712 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/7813

Abstract: A process for manufacturing a semiconductor device envisages the steps of: providing a semiconductor material body having at least one deep trench that extends through said body of semiconductor material starting from a top surface thereof; and filling the deep trench via an epitaxial growth of semiconductor material, thereby forming a columnar structure within the body of semiconductor material. The manufacturing process further envisages the step of modulating the epitaxial growth by means of a concurrent chemical etching of the semiconductor material that is undergoing epitaxial growth so as to obtain a compact filling free from voids of the deep trench; in particular, a flow of etching gas is introduced into the same reaction environment as that of the epitaxial growth, wherein a flow of source gas is supplied for the same epitaxial growth.

Abstract translation: 制造半导体器件的方法设想的步骤是：提供具有至少一个深沟槽的半导体材料体，该深沟槽从其顶表面开始延伸穿过半导体材料体; 并通过半导体材料的外延生长填充深沟槽，由此在半导体材料体内形成柱状结构。 制造工艺进一步设想通过正在进行外延生长的半导体材料的同时化学蚀刻来调制外延生长的步骤，从而获得没有深沟槽空隙的紧密填充物; 特别地，将蚀刻气体流引入到与外延生长相同的反应环境中，其中为相同的外延生长提供源气体的流动。