公开(公告)号：US20180045885A1

公开(公告)日：2018-02-15

申请号：US15457637

申请日：2017-03-13

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Arturo Luigi CANALI ,  Luigi VERGA ,  Luca MAGGI

IPC: G02B6/12 ,  H01L23/538 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065

CPC classification number: G02B6/12002 ,  G02B2006/12147 ,  H01L23/5381 ,  H01L24/09 ,  H01L25/0657 ,  H01L25/167 ,  H01L25/50 ,  H01L27/14634 ,  H01L2224/0401 ,  H01L2224/09177 ,  H01L2224/16145 ,  H01L2224/16235 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/92125 ,  H01L2224/92225 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06534 ,  H01L2225/06548 ,  H01L2225/06562 ,  H01L2924/14 ,  H01L2924/15313 ,  H01L2924/00

Abstract: A method of manufacturing semiconductor devices includes: coupling first and the second substrates by coupling a back surface of the second substrate with a front surface of the first substrate, thereby producing a step-like structure, with an uncovered portion of the front surface of the first substrate left uncovered by the second substrate coupling a first integrated circuit with the uncovered portion of the front surface of the first substrate; and coupling a second integrated circuit with the second substrate and the first integrated circuit by arranging the second integrated circuit extending bridge—like between the second substrate and the first integrated circuit.