公开(公告)号：US10796918B2

公开(公告)日：2020-10-06

申请号：US15640203

申请日：2017-06-30

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Alessandra Alberti ,  Paolo Badala' ,  Antonello Santangelo

IPC: H01L23/498 ,  H01L23/495 ,  H01L21/285 ,  H01L23/482 ,  H01L23/00

Abstract: An embodiment of an integrated device, including a chip of semiconductor material wherein an integrated circuit is integrated, is proposed; the integrated device includes a set of contact terminals for contacting the integrated circuit. At least one contact terminal of said set of contact terminals includes a contact layer of metal material being suitable to be directly coupled mechanically to an element external to the chip, and a coupling element for improving an electrical and/or mechanical coupling between the contact layer and the chip. The coupling element includes a coupling layer being formed by a combination between the metal material of the contact layer and the semiconductor material of the chip, with the coupling layer that is directly coupled to the chip and to the contact layer.

公开(公告)号：US11784049B2

公开(公告)日：2023-10-10

申请号：US17190722

申请日：2021-03-03

Applicant: STMicroelectronics S.r.l.

Inventor： Simone Rascuna' ,  Paolo Badala' ,  Anna Bassi ,  Mario Giuseppe Saggio ,  Giovanni Franco

IPC: H01L21/04 ,  H01L29/16 ,  H01L29/45 ,  H01L29/47

CPC classification number: H01L21/0485 ,  H01L21/0495 ,  H01L29/1608 ,  H01L29/45 ,  H01L29/47

Abstract: A method for manufacturing an electronic device based on SiC includes forming a structural layer of SiC on a front side of a substrate. The substrate has a back side that is opposite to the front side along a direction. Active regions of the electronic device are formed in the structure layer, and the active regions are configured to generate or conduct electric current during the use of the electronic device. A first electric terminal is formed on the structure layer, and an intermediate layer is formed at the back side of the substrate. The intermediate layer is heated by a LASER beam in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds. A second electric terminal of the electronic device is formed on the intermediate layer.

公开(公告)号：US11043574B2

公开(公告)日：2021-06-22

申请号：US16535016

申请日：2019-08-07

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ferdinando Iucolano ,  Paolo Badala'

IPC: H01L29/66 ,  H01L21/285 ,  H01L29/20 ,  H01L29/205 ,  H01L29/47 ,  H01L29/778 ,  C23C14/00 ,  C23C14/06 ,  C23C14/30

Abstract: An HEMT device of a normally-on type, comprising a heterostructure; a dielectric layer extending over the heterostructure; and a gate electrode extending right through the dielectric layer. The gate electrode is a stack, which includes: a protection layer, which is made of a metal nitride with stuffed grain boundaries and extends over the heterostructure, and a first metal layer, which extends over the protection layer and is completely separated from the heterostructure by said protection layer.