公开(公告)号：US20030075739A1

公开(公告)日：2003-04-24

申请号：US10251907

申请日：2002-09-20

Applicant: STMICROELECTRONICS S.r.I.

Inventor： Antonino Schillaci ,  Paola Maria Ponzio

IPC: H01L029/76

CPC classification number: H01L29/7802 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/42368 ,  H01L29/66712 ,  Y10S438/981

Abstract: A MOS semiconductor device formed on a substrate of a first conductivity type is provided. The device includes active zones for elementary active elements, and at least one inactive zone suitable for electric signal input or output. The substrate is connected with the drain terminal of the device, and at least one of the elementary active elements includes a body region of a second conductivity type that is connected with the source terminal of the device. The at least one inactive zone includes a semiconductor region of the second conductivity type formed in the substrate and adjacent a surface of the substrate, a conductive layer located over the semiconductor region, and a silicon oxide layer located between the semiconductor region and the conductive layer. The silicon oxide layer has alternating first zones and second zones that are contiguous to each other, with the first zones having a greater thickness than the second zones.

Abstract translation: 提供了形成在第一导电类型的衬底上的MOS半导体器件。 该装置包括用于基本有源元件的活动区域和至少一个适用于电信号输入或输出的非活动区域。 衬底与器件的漏极端子连接，并且至少一个基本有源元件包括与器件的源极端子连接的第二导电类型的体区。 所述至少一个非活性区域包括形成在所述衬底中并且邻近所述衬底的表面的第二导电类型的半导体区域，位于所述半导体区域上方的导电层以及位于所述半导体区域和所述导电层之间的氧化硅层 。 氧化硅层具有彼此邻接的交替的第一区和第二区，第一区具有比第二区更大的厚度。