公开(公告)号：US20160181515A1

公开(公告)日：2016-06-23

申请号：US14574778

申请日：2014-12-18

Applicant: STMICROELECTRONICS S.r.I.

Inventor： Barbara ZANDERIGHI ,  Camillo BRESOLIN ,  Valerio SPREAFICO

IPC: H01L45/00

CPC classification number: H01L45/06 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1625

Abstract: A method for making an integrated circuit (IC) including embedded phase change memory (PCM) may include forming an array of heating elements above a substrate including processing circuitry thereon, and forming a respective PCM chalcogenide glass layer above each heating element. This may be done by forming a tellurium-rich, germanium-antimony-tellurium (GST) layer above the heating element, and forming a germanium-rich GST layer above the tellurium-rich GST layer. In another embodiment, the method may include forming the PCM glass layers to have a nitrogen concentration doping profile that increase in a direction upward from the heating element.

Abstract translation: 制造包括嵌入式相变存储器（PCM）的集成电路（IC）的方法可以包括在其上包括处理电路的衬底上形成加热元件阵列，并在每个加热元件上形成相应的PCM硫族化物玻璃层。 这可以通过在加热元件上形成富含碲的锗 - 碲（GST）层，并在碲富集的GST层之上形成富含锗的GST层来完成。 在另一个实施例中，该方法可以包括形成PCM玻璃层以具有在从加热元件向上的方向上增加的氮浓度掺杂分布。