公开(公告)号：US20250038060A1

公开(公告)日：2025-01-30

申请号：US18917464

申请日：2024-10-16

Applicant: STMicroelectronics S.r.l.

Inventor： Simone RASCUNA' ,  Claudio CHIBBARO ,  Alfio GUARNERA ,  Mario Giuseppe SAGGIO ,  Francesco LIZIO

IPC: H01L23/31 ,  H01L21/04 ,  H01L21/56 ,  H01L29/16

Abstract: An electronic power device includes a substrate of silicon carbide (SiC) having a front surface and a rear surface which lie in a horizontal plane and are opposite to one another along a vertical axis. The substrate includes an active area, provided in which are a number of doped regions, and an edge area, which is not active, distinct from and surrounding the active area. A dielectric region is arranged above the front surface, in at least the edge area. A passivation layer is arranged above the front surface of the substrate, and is in contact with the dielectric region in the edge area. The passivation layer includes at least one anchorage region that extends through the thickness of the dielectric region at the edge area, such as to define a mechanical anchorage for the passivation layer.

公开(公告)号：US20230092543A1

公开(公告)日：2023-03-23

申请号：US18052510

申请日：2022-11-03

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Simone RASCUNA' ,  Claudio CHIBBARO ,  Alfio GUARNERA ,  Mario Giuseppe SAGGIO ,  Francesco LIZIO

IPC: H01L23/31 ,  H01L21/04 ,  H01L21/56 ,  H01L29/16

Abstract: An electronic power device includes a substrate of silicon carbide (SiC) having a front surface and a rear surface which lie in a horizontal plane and are opposite to one another along a vertical axis. The substrate includes an active area, provided in which are a number of doped regions, and an edge area, which is not active, distinct from and surrounding the active area. A dielectric region is arranged above the front surface, in at least the edge area. A passivation layer is arranged above the front surface of the substrate, and is in contact with the dielectric region in the edge area. The passivation layer includes at least one anchorage region that extends through the thickness of the dielectric region at the edge area, such as to define a mechanical anchorage for the passivation layer.

公开(公告)号：US20210104445A1

公开(公告)日：2021-04-08

申请号：US17039289

申请日：2020-09-30

Applicant: STMicroelectronics S.r.l.

Inventor： Simone RASCUNA' ,  Claudio CHIBBARO ,  Alfio GUARNERA ,  Mario Giuseppe SAGGIO ,  Francesco LIZIO

IPC: H01L23/31 ,  H01L29/16 ,  H01L21/04 ,  H01L21/56

Abstract: An electronic power device includes a substrate of silicon carbide (SiC) having a front surface and a rear surface which lie in a horizontal plane and are opposite to one another along a vertical axis. The substrate includes an active area, provided in which are a number of doped regions, and an edge area, which is not active, distinct from and surrounding the active area. A dielectric region is arranged above the front surface, in at least the edge area. A passivation layer is arranged above the front surface of the substrate, and is in contact with the dielectric region in the edge area. The passivation layer includes at least one anchorage region that extends through the thickness of the dielectric region at the edge area, such as to define a mechanical anchorage for the passivation layer.