公开(公告)号：US20220415655A1

公开(公告)日：2022-12-29

申请号：US17847679

申请日：2022-06-23

Applicant: STMicroelectronics S.r.l.

Inventor： Paolo BADALA' ,  Anna BASSI ,  Massimo BOSCAGLIA ,  Valentina SCUDERI ,  Giovanni FRANCO

IPC: H01L21/04 ,  H01L29/16 ,  H01L29/872 ,  H01L29/78

Abstract: A metal layer is deposited on a wafer that has silicon carbide, wherein the metal layer forms a contact face. A laser annealing is performed at the contact face using a laser beam application that causes the metal layer to react with the wafer and form a silicide layer. The laser beam has a footprint having a size. To laser anneal the contact face, a first portion of the contact face is irradiated, the footprint of the laser beam is moved by a step smaller than the size of the footprint, and a second portion of the contact face is irradiated, thereby causing the first portion and the second portion of the contact face to overlap.

公开(公告)号：US20230094592A1

公开(公告)日：2023-03-30

申请号：US17949057

申请日：2022-09-20

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Paolo BADALA' ,  Valentina SCUDERI ,  Anna BASSI ,  Massimo BOSCAGLIA ,  Giovanni FRANCO

IPC: H01L29/16 ,  H01L21/02 ,  H01L29/66 ,  H01L21/268

Abstract: For the manufacturing of a vertical conduction silicon carbide electronic device, a work wafer, which has a silicon carbide substrate having a work face, is processed. A rough face is formed from the work face of the silicon carbide substrate. The rough face has a roughness higher than a threshold. A metal layer is deposited on the rough face and the metal layer is annealed, thereby causing the metal layer to react with the silicon carbide substrate, forming a silicide layer having a plurality of protrusions of silicide.