公开(公告)号：US20130228881A1

公开(公告)日：2013-09-05

申请号：US13862208

申请日：2013-04-12

Applicant: STMICROELECTRONICS, INC.

Inventor： Venkatesh Mohanakrishnaswamy ,  Loi N. Nguyen

IPC: B81B3/00

CPC classification number: B81B3/0021 ,  B81C1/00166 ,  B81C1/00626

Abstract: A method that includes forming an opening between at least one first electrode and a second electrode by forming a recess in a first electrode layer, the recess having sidewalls that correspond to a surface of the at least one first electrode, forming a first sacrificial layer on the sidewalls of the recess, the first sacrificial layer having a first width that corresponds to a second width of the opening, forming a second electrode layer in the recess that corresponds to the second electrode, and removing the first sacrificial layer to form the opening between the second electrode and the at least one first electrode.

Abstract translation: 一种方法，其包括通过在第一电极层中形成凹槽而在至少一个第一电极和第二电极之间形成开口，所述凹部具有对应于所述至少一个第一电极的表面的侧壁，形成第一牺牲层 所述凹槽的侧壁，所述第一牺牲层具有对应于所述开口的第二宽度的第一宽度，在所述凹部中形成对应于所述第二电极的第二电极层，以及移除所述第一牺牲层以形成 所述第二电极和所述至少一个第一电极。

公开(公告)号：US08853850B2

公开(公告)日：2014-10-07

申请号：US13784533

申请日：2013-03-04

Applicant: STMicroelectronics, Inc.

Inventor： Venkatesh Mohanakrishnaswamy ,  Loi N. Nguyen ,  Venkata Ramana Yogi Mallela

IPC: H01L23/12 ,  B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0018 ,  B81B2207/015 ,  B81B2207/097 ,  B81C1/00261 ,  B81C1/00269 ,  B81C2203/0109 ,  B81C2203/019

Abstract: A packaging scheme for MEMS device is provided. A method of packaging MEMS device in a semiconductor structure includes forming an insulation fence that surrounds the MEMS device on the semiconductor structure. The method further includes attaching a wafer of dielectric material to the insulation fence. The lid wafer, the insulation fence, and the semiconductor structure enclose the MEMS device.

Abstract translation: 提供了MEMS器件的封装方案。 在半导体结构中封装MEMS器件的方法包括在半导体结构上形成围绕MEMS器件的绝缘栅栏。 该方法还包括将绝缘材料的晶片附接到绝缘栅栏。 盖子晶片，绝缘栅栏和半导体结构包围MEMS器件。

公开(公告)号：US08680631B2

公开(公告)日：2014-03-25

申请号：US13862208

申请日：2013-04-12

Applicant: STMicroelectronics, Inc.

Inventor： Venkatesh Mohanakrishnaswamy ,  Loi N. Nguyen

IPC: H01L29/84

CPC classification number: B81B3/0021 ,  B81C1/00166 ,  B81C1/00626

Abstract: A method that includes forming an opening between at least one first electrode and a second electrode by forming a recess in a first electrode layer, the recess having sidewalls that correspond to a surface of the at least one first electrode, forming a first sacrificial layer on the sidewalls of the recess, the first sacrificial layer having a first width that corresponds to a second width of the opening, forming a second electrode layer in the recess that corresponds to the second electrode, and removing the first sacrificial layer to form the opening between the second electrode and the at least one first electrode.

Abstract translation: 一种方法，其包括通过在第一电极层中形成凹槽而在至少一个第一电极和第二电极之间形成开口，所述凹部具有对应于所述至少一个第一电极的表面的侧壁，形成第一牺牲层 所述凹槽的侧壁，所述第一牺牲层具有对应于所述开口的第二宽度的第一宽度，在所述凹部中形成对应于所述第二电极的第二电极层，以及移除所述第一牺牲层以形成 所述第二电极和所述至少一个第一电极。

公开(公告)号：US20140061824A1

公开(公告)日：2014-03-06

申请号：US13784533

申请日：2013-03-04

Applicant: STMicroelectronics, Inc.

Inventor： Venkatesh Mohanakrishnaswamy ,  Loi N. Nguyen ,  Venkata Ramana Yogi Mallela

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0018 ,  B81B2207/015 ,  B81B2207/097 ,  B81C1/00261 ,  B81C1/00269 ,  B81C2203/0109 ,  B81C2203/019

Abstract: A packaging scheme for MEMS device is provided. A method of packaging MEMS device in a semiconductor structure includes forming an insulation fence that surrounds the MEMS device on the semiconductor structure. The method further includes attaching a wafer of dielectric material to the insulation fence. The lid wafer, the insulation fence, and the semiconductor structure enclose the MEMS device.

Abstract translation: 提供了MEMS器件的封装方案。 在半导体结构中封装MEMS器件的方法包括在半导体结构上形成围绕MEMS器件的绝缘栅栏。 该方法还包括将绝缘材料的晶片附接到绝缘栅栏。 盖子晶片，绝缘栅栏和半导体结构包围MEMS器件。