公开(公告)号：US20020028548A1

公开(公告)日：2002-03-07

申请号：US09910396

申请日：2001-07-20

Applicant: STMicroelectronics, Inc.

Inventor： Tsiu Chiu Chan ,  Mehdi Zamanian ,  David Charles McClure

IPC: H01L021/8238

CPC classification number: H01L27/11 ,  G11C11/412

Abstract: A circuit and method is disclosed for a memory cell for a static random access memory. The memory cell includes a pair of cross-coupled CMOS logic inverters that are connected together to form a latch, and a pair of p-channel transmission gate transistors that are connected to the logic inverters for selectively providing access to the latch. The layout of the memory cell includes a rectangular active area in which the p-channel transistors of the memory cell are located. The rectangular active area abuts a similar active area of an adjacent memory cell along a row of memory cells so as to form a single rectangular active area for the p-channel memory cell transistors. The rectangular active area reduces the occurrence of fabrication-related phenomena that adversely effect the performance of the memory cell.

Abstract translation: 公开了一种用于静态随机存取存储器的存储单元的电路和方法。 存储单元包括连接在一起以形成锁存器的一对交叉耦合CMOS逻辑反相器，以及连接到逻辑反相器的一对p沟道传输栅极晶体管，用于选择性地提供对锁存器的访问。 存储单元的布局包括存储单元的p沟道晶体管位于其中的矩形有源区。 矩形有源区域沿着一行存储器单元邻接相邻存储器单元的类似有效区域，以形成用于p沟道存储单元晶体管的单个矩形有源区域。 矩形有源区减少了不利地影响存储单元的性能的制造相关现象的发生。

公开(公告)号：US20030001589A1

公开(公告)日：2003-01-02

申请号：US10135880

申请日：2002-04-29

Applicant: STMicroelectronics, Inc.

Inventor： Tsiu Chiu Chan ,  Elmer H. Guritz ,  Michael J. Callahan JR.

IPC: G01R031/02

CPC classification number: G11C17/18

Abstract: A fuse-redundancy circuit for use in an integrated circuit and method for operating the same. The fuse-redundancy circuit comprises at least two fuses, at least two fuse-control devices, and a status-checking circuit. Each one of the at least two fuse-control devices is operable to control an electric current flowing through a corresponding one of the at least two fuses. The status-checking circuit operable to generate a status signal having (i) a first state when at least one of the at least two fuses is blown, and (ii) a second state otherwise.

Abstract translation: 一种用于集成电路的熔丝冗余电路及其操作方法。 熔丝冗余电路包括至少两个保险丝，至少两个保险丝控制装置和状态检查电路。 所述至少两个熔丝控制装置中的每一个可操作以控制流过所述至少两个保险丝中相应一个的电流。 所述状态检查电路可操作以产生状态信号，所述状态信号具有（i）当所述至少两个保险丝中的至少一个熔丝被熔断时的第一状态，以及（ii）否则为第二状态。

公开(公告)号：US20020008296A1

公开(公告)日：2002-01-24

申请号：US09792962

申请日：2001-02-26

Applicant: STMicroelectronics, Inc.

Inventor： Tsiu Chiu Chan ,  Melvin Joseph DeSilva

IPC: H01L021/00 ,  H01L029/84

CPC classification number: G01P15/18 ,  B81B2201/014 ,  B81C1/00246 ,  B81C2203/0735 ,  G01P15/0802 ,  G01P15/135

Abstract: An integrated circuit and method are provided for sensing activity such as acceleration in a predetermined direction of movement. The integrated released beam sensor preferably includes a switch detecting circuit region and a sensor switching region connected to and positioned adjacent the switch detecting circuit region. The sensor switching region preferably includes a plurality of floating contacts positioned adjacent and lengthwise extending outwardly from said switch detecting circuit region for defining a plurality of released beams so that each of said plurality of released beams displaces in a predetermined direction responsive to acceleration. The plurality of released beams preferably includes at least two released beams lengthwise extending outwardly from the switch detecting circuit region to different predetermined lengths and at least two released beams lengthwise extending outwardly from the switch detecting circuit region to substantially the same predetermined lengths. The methods of forming an integrated sensor advantageously are preferably compatible with know integrated circuit manufacturing processes, such as for CMOS circuit manufacturing, with only slight variations therefrom.

Abstract translation: 提供集成电路和方法用于感测诸如预定运动方向的加速度的活动。 集成释放的光束传感器优选地包括开关检测电路区域和连接到并且位于开关检测电路区域附近的传感器开关区域。 传感器切换区域优选地包括多个浮动触点，其位于邻近并纵向地从所述开关检测电路区域向外延伸，用于限定多个释放的波束，使得所述多个释放波束中的每一个响应加速度以预定方向移动。 多个释放的光束优选地包括至少两个从开关检测电路区域向外延伸到不同预定长度的释放光束，以及至少两个从开关检测电路区域向外延伸到大致相同的预定长度的释放光束。 有利地形成集成传感器的方法优选地与知道的集成电路制造工艺相兼容，例如用于CMOS电路制造，仅具有轻微的变化。