公开(公告)号：US20230387208A1

公开(公告)日：2023-11-30

申请号：US18197945

申请日：2023-05-16

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Pascal CHEVALIER ,  Sebastien FREGONESE ,  Thomas ZIMMER

IPC: H01L29/10 ,  H01L29/732 ,  H01L29/08 ,  H01L29/66

CPC classification number: H01L29/1008 ,  H01L29/7322 ,  H01L29/0821 ,  H01L29/66272 ,  H01L29/0808 ,  H01L29/6625 ,  H01L29/6631

Abstract: A lateral bipolar transistor includes an emitter region doped with a first conductivity type, having a first width and a first average doping concentration; a collector region doped with the first conductivity type, having a second width greater than the first width of the emitter region and a second average doping concentration lower than the first average doping concentration ; and a base region positioned between the emitter and collector regions. The emitter, collector and base regions are arranged in a silicon layer on an insulator layer on a substrate. A substrate region that is deprived of the silicon and insulator layers is positioned on a side of the collector region. A bias circuit is coupled, and configured to deliver, to the substrate region a bias voltage. This bias voltage is controlled to modulate an electrostatic doping of the collector region.