-
公开(公告)号：US11581449B2
公开(公告)日：2023-02-14
申请号：US16703689
申请日：2019-12-04
Applicant: STMicroelectronics (Crolles 2) SAS
Inventor： Younes Benhammou , Dominique Golanski , Denis Rideau
IPC: H01L31/107 , H01L31/028 , H01L31/0745 , H01L31/18
Abstract: The present disclosure relates to a photodiode comprising a first part made of silicon and a second part made of doped germanium lying on and in contact with the first part, the first part comprising a stack of a first area and of a second area forming a p-n junction and the doping level of the germanium increasing as the distance from the p-n junction increases.
Search Results
1
records
(took 0.01 seconds)
筛选
AND
AND
过滤
NOT
NOT
Scan to Join
