公开(公告)号：US20170179250A1

公开(公告)日：2017-06-22

申请号：US14973825

申请日：2015-12-18

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： Pierre Caubet ,  Florian Domengie ,  Carlos Augusto Suarez Segovia ,  Aurelie Bajolet ,  Onintza Ros Bengoechea

IPC: H01L29/49 ,  H01L29/40

CPC classification number: H01L21/28088 ,  H01L29/4966

Abstract: Local variability of the grain size of work function metal, as well as its crystal orientation, induces a variable work function and local variability of transistor threshold voltage. If the metal nitride for the work function metal of the transistor gate is deposited using a radio frequency physical vapor deposition, equiaxed grains are produced. The substantially equiaxed structure for the metal nitride work function metal layer (such as with TiN) reduces local variability in threshold voltage.

公开(公告)号：US20170256625A1

公开(公告)日：2017-09-07

申请号：US15601115

申请日：2017-05-22

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Pierre Caubet ,  Florian Domengie ,  Carlos Augusto Suarez Segovia ,  Aurelie Bajolet ,  Onintza Ros Bengoechea

IPC: H01L29/49 ,  H01L29/40

CPC classification number: H01L21/28088 ,  H01L29/4966

Abstract: Local variability of the grain size of work function metal, as well as its crystal orientation, induces a variable work function and local variability of transistor threshold voltage. If the metal nitride for the work function metal of the transistor gate is deposited using a radio frequency physical vapor deposition, equiaxed grains are produced. The substantially equiaxed structure for the metal nitride work function metal layer (such as with TiN) reduces local variability in threshold voltage.

公开(公告)号：US10211059B2

公开(公告)日：2019-02-19

申请号：US15601115

申请日：2017-05-22

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Pierre Caubet ,  Florian Domengie ,  Carlos Augusto Suarez Segovia ,  Aurelie Bajolet ,  Onintza Ros Bengoechea

IPC: H01L29/49 ,  H01L21/28

Abstract: Local variability of the grain size of work function metal, as well as its crystal orientation, induces a variable work function and local variability of transistor threshold voltage. If the metal nitride for the work function metal of the transistor gate is deposited using a radio frequency physical vapor deposition, equiaxed grains are produced. The substantially equiaxed structure for the metal nitride work function metal layer (such as with TiN) reduces local variability in threshold voltage.

公开(公告)号：US09691871B1

公开(公告)日：2017-06-27

申请号：US14973825

申请日：2015-12-18

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Pierre Caubet ,  Florian Domengie ,  Carlos Augusto Suarez Segovia ,  Aurelie Bajolet ,  Onintza Ros Bengoechea

IPC: H01L21/76 ,  H01L29/49 ,  H01L29/40

CPC classification number: H01L21/28088 ,  H01L29/4966

Abstract: Local variability of the grain size of work function metal, as well as its crystal orientation, induces a variable work function and local variability of transistor threshold voltage. If the metal nitride for the work function metal of the transistor gate is deposited using a radio frequency physical vapor deposition, equiaxed grains are produced. The substantially equiaxed structure for the metal nitride work function metal layer (such as with TiN) reduces local variability in threshold voltage.