公开(公告)号：US20190244857A1

公开(公告)日：2019-08-08

申请号：US16384147

申请日：2019-04-15

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Didier DUTARTRE ,  Jean-Pierre CARRERE ,  Jean-Luc HUGUENIN ,  Clement PRIBAT ,  Sarah KUSTER

IPC: H01L21/768 ,  H01L21/762 ,  H01L21/74 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/12

CPC classification number: H01L21/76877 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/743 ,  H01L21/7624 ,  H01L21/823475 ,  H01L21/84 ,  H01L27/1207 ,  H01L29/0649

Abstract: A silicon on insulator substrate includes a semiconductor bulk handle wafer, an insulating layer on said semiconductor bulk handle wafer and a semiconductor film on said insulating layer. An opening extends completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer. Epitaxial material fills the opening and extends on said semiconductor film, with the epitaxial material and semiconductor film forming a thick semiconductor film. A trench isolation surrounds a region of the thick semiconductor film to define an electrical contact made to the semiconductor bulk handle wafer through the opening.

公开(公告)号：US20230163057A1

公开(公告)日：2023-05-25

申请号：US18095629

申请日：2023-01-11

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Jean-Pierre CARRERE ,  Francois GUYADER

IPC: H01L23/498 ,  H01L21/48 ,  H01L31/02

CPC classification number: H01L23/49822 ,  H01L21/4857 ,  H01L23/49894 ,  H01L31/02016

Abstract: A first circuit structure of an electronic IC device includes comprises light-sensitive optical circuit components. A second circuit structure of the electronic IC device includes an electronic circuit component and an electrically-conductive layer extending between and at a distance from the optical circuit components and the electronic circuit component. Electrical connections link the optical circuit components and the electronic circuit component. These electrical connections are formed in holes which pass through dielectric layers and the intermediate conductive layer. Electrical insulation rings between the electrical connections and the conductive layer are provided which surround the electrical connections and have a thickness equal to a thickness of the conductive layer.

公开(公告)号：US20210233811A1

公开(公告)日：2021-07-29

申请号：US17228164

申请日：2021-04-12

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Didier DUTARTRE ,  Jean-Pierre CARRERE ,  Jean-Luc HUGUENIN ,  Clement PRIBAT ,  Sarah KUSTER

IPC: H01L21/768 ,  H01L29/06 ,  H01L27/12 ,  H01L21/8234 ,  H01L21/84 ,  H01L21/762 ,  H01L21/74

Abstract: A silicon on insulator substrate includes a semiconductor bulk handle wafer, an insulating layer on said semiconductor bulk handle wafer and a semiconductor film on said insulating layer. An opening extends completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer. Epitaxial material fills the opening and extends on said semiconductor film, with the epitaxial material and semiconductor film forming a thick semiconductor film. A trench isolation surrounds a region of the thick semiconductor film to define an electrical contact made to the semiconductor bulk handle wafer through the opening.

公开(公告)号：US20210074618A1

公开(公告)日：2021-03-11

申请号：US17015634

申请日：2020-09-09

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Jean-Pierre CARRERE ,  Francois GUYADER

IPC: H01L23/498 ,  H01L21/48 ,  H01L31/02

Abstract: A first circuit structure of an electronic IC device includes comprises light-sensitive optical circuit components. A second circuit structure of the electronic IC device includes an electronic circuit component and an electrically-conductive layer extending between and at a distance from the optical circuit components and the electronic circuit component. Electrical connections link the optical circuit components and the electronic circuit component. These electrical connections are formed in holes which pass through dielectric layers and the intermediate conductive layer. Electrical insulation rings between the electrical connections and the conductive layer are provided which surround the electrical connections and have a thickness equal to a thickness of the conductive layer.