公开(公告)号：US11730433B2

公开(公告)日：2023-08-22

申请号：US17529543

申请日：2021-11-18

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Gilles Gasiot ,  Severin Trochut ,  Olivier Le Neel ,  Victor Malherbe

IPC: A61B6/00 ,  G01T1/24

CPC classification number: A61B6/4208 ,  G01T1/24

Abstract: An X-ray detector includes a first circuit with an NPN-type bipolar transistor and a second circuit configured to compare a voltage at a terminal of the NPN-type bipolar transistor with a reference value substantially equal to a value of the terminal voltage which would occur when the first circuit has been exposed to a threshold quantity of X-rays.

公开(公告)号：US11698296B2

公开(公告)日：2023-07-11

申请号：US17024202

申请日：2020-09-17

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Stephane Monfray ,  Olivier Le Neel ,  Frederic Boeuf

IPC: G01J1/04 ,  H01L31/0232 ,  G01J1/44 ,  G02B5/18 ,  H01L31/101

CPC classification number: G01J1/0411 ,  G01J1/44 ,  G02B5/1828 ,  G02B5/1857 ,  H01L31/02327 ,  H01L31/1013 ,  G01J2001/444

Abstract: A light sensor includes a semiconductor substrate supporting a number of pixels. Each pixel includes a photoconversion zone extending in the substrate between a front face and a back face of the substrate. An optical diffraction grating is arranged over the back face of the substrate at a position facing the photoconversion zone of the pixel. For at least two different pixels of the light sensor, the optical diffraction gratings have different pitches. Additionally, the optical grating of each pixel is surrounded by an opaque wall configured to absorb at operating wavelengths of the sensor.