公开(公告)号：US20240119992A1

公开(公告)日：2024-04-11

申请号：US18466283

申请日：2023-09-13

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Antonio Calandra ,  Julia Castellan ,  Philippe Bienvenu

IPC: G11C11/4074 ,  G11C11/4072 ,  G11C11/4096

CPC classification number: G11C11/4074 ,  G11C11/4072 ,  G11C11/4096

Abstract: The present disclosure relates to a method comprising: applying, by a control circuit, a first pulsed signal, consisting of sequential first voltage pulses, to the gate of a power transistor supplying a capacitive load of the circuit, the pulses of the first pulsed signal being separated from each other by a first wait time; further to one or more of the pulses of the first signal, making a comparison, by a comparator, of the value of the voltage across the capacitive load with a first voltage threshold value; and, if the first voltage threshold value is exceeded, applying a second pulsed signal, consisting of sequential second voltage pulses, to the gate of the power transistor, the pulses of the second pulsed signal being separated from each other by a second wait time shorter than the first wait time.

公开(公告)号：US20240194679A1

公开(公告)日：2024-06-13

申请号：US18524915

申请日：2023-11-30

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Philippe Bienvenu ,  Julia Castellan ,  Antonio Calandra

IPC: H01L27/092 ,  H01L29/40 ,  H01L29/417 ,  H01L29/78 ,  H02P7/03

CPC classification number: H01L27/0922 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41758 ,  H01L29/7813 ,  H01L29/7816 ,  H02P7/04

Abstract: An integrated monolithic H-bridge is formed in a bulk semiconductor region. A first branch includes a first vertical MOS transistor and a second lateral MOS transistor integrated in the bulk semiconductor region. The first vertical MOS transistor and the second lateral MOS transistor are coupled in series. A second branch includes a third vertical MOS transistor and a fourth lateral MOS transistor integrated in the bulk semiconductor region. The third vertical MOS transistor and the fourth lateral MOS transistor are coupled in series and the first and second branches being coupled in parallel.

公开(公告)号：US11381233B2

公开(公告)日：2022-07-05

申请号：US16028559

申请日：2018-07-06

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Philippe Bienvenu ,  Antonio Calandra

IPC: H03K17/082 ,  H03K5/24 ,  H03K3/037 ,  H02H3/20 ,  H02H3/00

Abstract: A protection circuit for a transistor switch coupled to a power supply rail operates to modulate a control voltage at a control terminal of the transistor switch. A first circuit detects an overload across the terminals of the switch with respect to a threshold to generate a signal which modulates the control voltage. A second circuit operates to adjust a value of the threshold in response to sensed variations in a supply voltage at the power supply rail.