公开(公告)号：US20240194679A1

公开(公告)日：2024-06-13

申请号：US18524915

申请日：2023-11-30

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Philippe Bienvenu ,  Julia Castellan ,  Antonio Calandra

IPC: H01L27/092 ,  H01L29/40 ,  H01L29/417 ,  H01L29/78 ,  H02P7/03

CPC classification number: H01L27/0922 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41758 ,  H01L29/7813 ,  H01L29/7816 ,  H02P7/04

Abstract: An integrated monolithic H-bridge is formed in a bulk semiconductor region. A first branch includes a first vertical MOS transistor and a second lateral MOS transistor integrated in the bulk semiconductor region. The first vertical MOS transistor and the second lateral MOS transistor are coupled in series. A second branch includes a third vertical MOS transistor and a fourth lateral MOS transistor integrated in the bulk semiconductor region. The third vertical MOS transistor and the fourth lateral MOS transistor are coupled in series and the first and second branches being coupled in parallel.

公开(公告)号：US11381233B2

公开(公告)日：2022-07-05

申请号：US16028559

申请日：2018-07-06

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Philippe Bienvenu ,  Antonio Calandra

IPC: H03K17/082 ,  H03K5/24 ,  H03K3/037 ,  H02H3/20 ,  H02H3/00

Abstract: A protection circuit for a transistor switch coupled to a power supply rail operates to modulate a control voltage at a control terminal of the transistor switch. A first circuit detects an overload across the terminals of the switch with respect to a threshold to generate a signal which modulates the control voltage. A second circuit operates to adjust a value of the threshold in response to sensed variations in a supply voltage at the power supply rail.

公开(公告)号：US20200067503A1

公开(公告)日：2020-02-27

申请号：US16540954

申请日：2019-08-14

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Philippe Bienvenu

IPC: H03K17/12 ,  H03K17/0812

Abstract: In one embodiment, a circuit includes a plurality of elementary transistors connected in parallel between a node of application of a first potential of a power supply voltage and a node for coupling a load. The plurality of transistors includes a first assembly of elementary transistors having their gates coupled to a control node by a first circuit and a second assembly of elementary transistors having their gates coupled to the control node by a second circuit. The second circuit has two states, where the first and second circuits are configured to supply a substantially identical control voltage to the gates of the first and second assemblies of elementary transistors when the second circuit is in one of the two states.

公开(公告)号：US20240119992A1

公开(公告)日：2024-04-11

申请号：US18466283

申请日：2023-09-13

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Antonio Calandra ,  Julia Castellan ,  Philippe Bienvenu

IPC: G11C11/4074 ,  G11C11/4072 ,  G11C11/4096

CPC classification number: G11C11/4074 ,  G11C11/4072 ,  G11C11/4096

Abstract: The present disclosure relates to a method comprising: applying, by a control circuit, a first pulsed signal, consisting of sequential first voltage pulses, to the gate of a power transistor supplying a capacitive load of the circuit, the pulses of the first pulsed signal being separated from each other by a first wait time; further to one or more of the pulses of the first signal, making a comparison, by a comparator, of the value of the voltage across the capacitive load with a first voltage threshold value; and, if the first voltage threshold value is exceeded, applying a second pulsed signal, consisting of sequential second voltage pulses, to the gate of the power transistor, the pulses of the second pulsed signal being separated from each other by a second wait time shorter than the first wait time.

公开(公告)号：US20160103464A1

公开(公告)日：2016-04-14

申请号：US14975519

申请日：2015-12-18

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Philippe Bienvenu

IPC: G05F3/26

CPC classification number: G05F3/262 ,  G05F1/10 ,  G05F3/18 ,  H02M3/07

Abstract: A circuit includes a current source series-connected with a load between first and second terminals and an element coupled in parallel with the load between the first and second terminals. A value of a current in the current source is controlled based on a current flowing in the element between the first and second terminals. The value of the current in the current source is controlled proportional to power consumption in the load based on the current flowing in the element between the first and second terminals. The element is used to limit a voltage across the load while the value of the current is being controlled.

Abstract translation: 电路包括与第一和第二端子之间的负载串联连接的电流源和与第一和第二端子之间的负载并联耦合的元件。 基于在第一和第二端子之间的元件中流动的电流来控制电流源中的电流的值。 基于在第一和第二端子之间的元件中流动的电流，电流源中的电流的值被控制成与负载中的功率消耗成比例。 该元件用于限制负载上的电压，同时控制电流的值。

公开(公告)号：US11063581B2

公开(公告)日：2021-07-13

申请号：US16816617

申请日：2020-03-12

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Philippe Bienvenu

IPC: H03K17/08 ,  H03K17/06 ,  H03K17/16 ,  H03K17/12

Abstract: A method includes simultaneously controlling several transistors by a first signal and separately controlling the transistors by distinct second pulsed signals.

公开(公告)号：US10819330B2

公开(公告)日：2020-10-27

申请号：US16540954

申请日：2019-08-14

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Philippe Bienvenu

IPC: H03K17/0812 ,  H03K17/12

Abstract: In one embodiment, a circuit includes a plurality of elementary transistors connected in parallel between a node of application of a first potential of a power supply voltage and a node for coupling a load. The plurality of transistors includes a first assembly of elementary transistors having their gates coupled to a control node by a first circuit and a second assembly of elementary transistors having their gates coupled to the control node by a second circuit. The second circuit has two states, where the first and second circuits are configured to supply a substantially identical control voltage to the gates of the first and second assemblies of elementary transistors when the second circuit is in one of the two states.

公开(公告)号：US20200321954A1

公开(公告)日：2020-10-08

申请号：US16816617

申请日：2020-03-12

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Philippe Bienvenu

IPC: H03K17/06 ,  H03K17/08

Abstract: A transistor control circuit is disclosed. In an embodiment a method includes simultaneously controlling several transistors by a first signal and separately controlling the transistors by distinct second pulsed signals.

公开(公告)号：US09772647B2

公开(公告)日：2017-09-26

申请号：US14975519

申请日：2015-12-18

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Philippe Bienvenu

IPC: G05F3/18 ,  G05F3/26 ,  G05F1/10 ,  H02M3/07

CPC classification number: G05F3/262 ,  G05F1/10 ,  G05F3/18 ,  H02M3/07

Abstract: A circuit includes a current source series-connected with a load between first and second terminals and an element coupled in parallel with the load between the first and second terminals. A value of a current in the current source is controlled based on a current flowing in the element between the first and second terminals. The value of the current in the current source is controlled proportional to power consumption in the load based on the current flowing in the element between the first and second terminals. The element is used to limit a voltage across the load while the value of the current is being controlled.

公开(公告)号：US09218009B2

公开(公告)日：2015-12-22

申请号：US13960224

申请日：2013-08-06

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Philippe Bienvenu

IPC: G05F3/18 ,  G05F1/10 ,  G05F3/26 ,  H02M3/07

CPC classification number: G05F3/262 ,  G05F1/10 ,  G05F3/18 ,  H02M3/07

Abstract: A circuit includes a current source intended to be series-connected with a load between two terminals of application of a first D.C. voltage. An element limits the voltage across the load and a circuit controls the value of the current in the current source with the current flowing in the element.

Abstract translation: 电路包括用于与应用第一直流电压的两个端子之间的负载串联连接的电流源。 一个元件限制负载两端的电压，电路通过流过元件的电流来控制电流源中的电流值。