公开(公告)号：US20190296004A1

公开(公告)日：2019-09-26

申请号：US16353658

申请日：2019-03-14

Applicant: STMicroelectronics (Tours) SAS ,  STMicroelectronics S.r.l.

Inventor： Aurelie Arnaud ,  Andrea Brischetto

IPC: H01L27/02 ,  H01L29/861 ,  H01L29/16 ,  H02H9/04

Abstract: An ESD protection circuit includes a terminal connected to the cathode of a first diode and to the anode of a second diode, where the cathode of the second diode is not made of epitaxial silicon.

公开(公告)号：US11515301B2

公开(公告)日：2022-11-29

申请号：US16353658

申请日：2019-03-14

Applicant: STMicroelectronics (Tours) SAS ,  STMicroelectronics S.r.l.

Inventor： Aurelie Arnaud ,  Andrea Brischetto

IPC: H01L27/02 ,  H01L29/16 ,  H01L29/861 ,  H02H9/04

Abstract: An ESD protection circuit includes a terminal connected to the cathode of a first diode and to the anode of a second diode, where the cathode of the second diode is not made of epitaxial silicon.

公开(公告)号：US20230290770A1

公开(公告)日：2023-09-14

申请号：US18052158

申请日：2022-11-02

Applicant: STMicroelectronics (Tours) SAS ,  STMicroelectronics S.r.l.

Inventor： Aurelie Arnaud ,  Andrea Brischetto

IPC: H01L27/02 ,  H01L29/16 ,  H01L29/861 ,  H02H9/04

CPC classification number: H01L27/0248 ,  H01L29/16 ,  H01L29/861 ,  H02H9/046 ,  H01L27/0255

Abstract: An ESD protection circuit includes a terminal connected to the cathode of a first diode and to the anode of a second diode, where the cathode of the second diode is not made of epitaxial silicon.