公开(公告)号：US20240266423A1

公开(公告)日：2024-08-08

申请号：US18420600

申请日：2024-01-23

Applicant: STMicroelectronics International N.V.

Inventor： Benjamin MORILLON

IPC: H01L29/747 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  H01L21/304

CPC classification number: H01L29/747 ,  H01L21/02323 ,  H01L21/28035 ,  H01L29/66386 ,  H01L21/3043

Abstract: The present disclosure concerns a method of forming an electronic power component inside and on top of a semiconductor substrate, comprising the following successive steps: a) forming of a peripheral groove in the semiconductor substrate on the side of a first surface of the semiconductor substrate; b) deposition of an oxygen-doped polysilicon layer, on top of and in contact with the bottom and the lateral walls of the peripheral groove and with the first surface of the semiconductor substrate; c) local deposition of a glass layer, on the oxygen-doped polysilicon layer, the glass layer extending in the peripheral groove and further extending over a portion of the first surface of the semiconductor substrate; and d) etching of the oxygen-doped polysilicon layer so that it extends on the first surface of the semiconductor substrate beyond the glass layer.