公开(公告)号：US20250083951A1

公开(公告)日：2025-03-13

申请号：US18807103

申请日：2024-08-16

Applicant: STMicroelectronics International N.V.

Inventor： Andrea NOMELLINI ,  Ilaria GELMI ,  Federica CAPRA ,  Michele VIMERCATI ,  Luca LAMAGNA

IPC: B81C1/00 ,  B81B3/00

Abstract: A process for manufacturing a microelectromechanical device includes: on a body containing semiconductor material, forming a sacrificial layer of dielectric material having a first surface, opposite to the body; conferring a sacrificial surface roughness to the first surface of the sacrificial layer; on the first surface of the sacrificial layer, forming a structural layer of semiconductor material having a second surface in contact with the first surface of the sacrificial layer. Conferring sacrificial surface roughness to the first surface of the sacrificial layer includes: on the sacrificial layer, forming a transfer layer of semiconductor material with intrinsic porosity; and partially removing the sacrificial layer through the transfer layer.

公开(公告)号：US20220169498A1

公开(公告)日：2022-06-02

申请号：US17534286

申请日：2021-11-23

Applicant: STMICROELECTRONICS S.R.L. ,  STMicroelectronics International N.V.

Inventor： Enri DUQI ,  Lorenzo BALDO ,  Paolo FERRARI ,  Benedetto Vigna ,  Flavio Francesco VILLA ,  Laura Maria CASTOLDI ,  Ilaria GELMI

IPC: B81B7/00

Abstract: A semiconductor device includes: a substrate; a transduction microstructure integrated in the substrate; a cap joined to the substrate and having a first face adjacent to the substrate and a second, outer, face; and a channel extending through the cap from the second face to the first face and communicating with the transduction microstructure. A protective membrane made of porous polycrystalline silicon permeable to aeriform substances is set across the channel.