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1.
公开(公告)号:US20250083951A1
公开(公告)日:2025-03-13
申请号:US18807103
申请日:2024-08-16
Applicant: STMicroelectronics International N.V.
Inventor: Andrea NOMELLINI , Ilaria GELMI , Federica CAPRA , Michele VIMERCATI , Luca LAMAGNA
Abstract: A process for manufacturing a microelectromechanical device includes: on a body containing semiconductor material, forming a sacrificial layer of dielectric material having a first surface, opposite to the body; conferring a sacrificial surface roughness to the first surface of the sacrificial layer; on the first surface of the sacrificial layer, forming a structural layer of semiconductor material having a second surface in contact with the first surface of the sacrificial layer. Conferring sacrificial surface roughness to the first surface of the sacrificial layer includes: on the sacrificial layer, forming a transfer layer of semiconductor material with intrinsic porosity; and partially removing the sacrificial layer through the transfer layer.
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2.
公开(公告)号:US20240199415A1
公开(公告)日:2024-06-20
申请号:US18084811
申请日:2022-12-20
Applicant: STMicroelectronics International N.V.
Inventor: Federico VERCESI , Andrea NOMELLINI , Paolo FERRARI
CPC classification number: B81C1/00285 , B81B7/0038 , B81B2201/0235 , B81B2201/0242 , B81B2203/0315 , B81B2207/07 , B81C2201/0109 , B81C2201/0132 , B81C2201/0178 , B81C2203/0118
Abstract: Disclosed herein is a process flow for forming a MEMS IMU including an accelerometer and a gyroscope each located in a separate sealed cavity maintained at a different pressure. Formation of the MEMS IMU includes the use of a first vHF release to etch a sacrificial layer underneath a structural layer containing the accelerometer and gyroscope and capping the device under formation to set both cavities at a first pressure. The floor of one of the cavities is formed to including a gas permeable layer. Formation further includes forming a chimney underneath the gas permeable layer and then performing a second vHF release to etch through the gas permeable layer and expose the cavity containing the gas permeable layer so that its pressure may be set to be different than that of the other cavity when the chimney is sealed.
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公开(公告)号:US20240426652A1
公开(公告)日:2024-12-26
申请号:US18742355
申请日:2024-06-13
Applicant: STMicroelectronics International N.V.
Inventor: Gianluca LONGONI , Luca SEGHIZZI , Francesco BIANCHI , Federico VERCESI , Andrea NOMELLINI , Silvia NICOLI
Abstract: A microelectromechanical sensor assembly includes a semiconductor die having a scaled cavity. A microelectromechanical inertial sensor has a sensing mass. A piezoelectric vibration sensor has a piezoelectric membrane. The sensing mass and the piezoelectric membrane are stacked one on top of the other and housed in the sealed cavity.
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公开(公告)号:US20240391760A1
公开(公告)日:2024-11-28
申请号:US18665062
申请日:2024-05-15
Applicant: STMicroelectronics International N.V.
Inventor: Silvia NICOLI , Giorgio ALLEGATO , Filippo DANIELE , Andrea NOMELLINI , Maria Carolina TURI
Abstract: A MEMS pressure transducer includes a semiconductor body, a lower dielectric region arranged above the semiconductor body, and a fixed electrode region and a lower anchoring region, which are formed by conductive material, are arranged on the lower dielectric region and are laterally separated from each other. A membrane of conductive material is suspended above the fixed electrode region so as to delimit a cavity upwardly, the fixed electrode region facing the cavity, the membrane being deformable as a function of pressure and forming a variable capacitor together with the fixed electrode region. An upper anchoring region of conductive material laterally delimits the cavity and is interposed, in direct contact, between the membrane and the lower anchoring region.
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5.
公开(公告)号:US20240425352A1
公开(公告)日:2024-12-26
申请号:US18741058
申请日:2024-06-12
Applicant: STMicroelectronics International N.V.
Inventor: Luca SEGHIZZI , Federico VERCESI , Gianluca LONGONI , Andrea NOMELLINI
IPC: B81B3/00 , G01P15/125
Abstract: An inertial MEMS device includes an inertial element provided by a movable structure that is responsive to movement. The moveable structure is formed in a first structural layer of semiconductor material. A suspended structure extends above the movable structure at a distance therefrom. The suspended structure is formed in a second structural layer of semiconductor material and carries a piezoelectric structure. The suspended structure and the piezoelectric structure form a wake-up element that generates an activation signal in presence of vibrations or shocks. The inertial element and the wake-up element are contained in a chamber formed by a substrate and a cap, together with peripheral portions of the first and the second structural layers.
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