公开(公告)号：US20250107121A1

公开(公告)日：2025-03-27

申请号：US18889098

申请日：2024-09-18

Applicant: STMicroelectronics International N.V.

Inventor： Gabriele BELLOCCHI ,  Simone RASCUNÁ ,  Valeria PUGLISI ,  Paolo BADALÁ

IPC: H01L29/872 ,  H01L21/04 ,  H01L29/16 ,  H01L29/47 ,  H01L29/66

Abstract: Method of forming a metal-semiconductor contact, comprising the steps of: forming, on a semiconductor body having a first electrical conductivity, a first metal layer; performing a thermal treatment of at least a portion of the first metal layer by a LASER beam having an incidence direction on the first metal layer, including heating the portion of the first metal layer, along said incidence direction, at a temperature between 1500° C. and 3000° C.