公开(公告)号：US20210226445A1

公开(公告)日：2021-07-22

申请号：US17222352

申请日：2021-04-05

Applicant: STMicroelectronics International N.V.

Inventor： Radhakrishnan SITHANANDAM

IPC: H02H9/04 ,  H01L23/528 ,  H01L27/02 ,  H01L29/08 ,  H01L27/12 ,  H01L29/78 ,  H01L27/06 ,  H01L29/06 ,  H01L29/739 ,  H01L29/87

Abstract: Electrostatic discharge (ESD) protection is provided in circuits which use of a tunneling field effect transistor (TFET) or an impact ionization MOSFET (IMOS). These circuits are supported in silicon on insulator (SOI) and bulk substrate configurations to function as protection diodes, supply clamps, failsafe circuits and cutter cells. Implementations with parasitic bipolar devices provide additional parallel discharge paths.

公开(公告)号：US20190319453A1

公开(公告)日：2019-10-17

申请号：US15951806

申请日：2018-04-12

Applicant: STMicroelectronics International N.V. ,  STMicroelectronics SA

Inventor： Radhakrishnan SITHANANDAM ,  Divya AGARWAL ,  Ghislain TROUSSIER ,  Jean JIMENEZ ,  Malathi KAR

IPC: H02H9/04 ,  H01L27/02

Abstract: Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit using an ESD event actuated MOSFET device. Triggering of the MOSFET device is made at both the gate terminal and the substrate (back gate) terminal. Additionally, the MOSFET device can be formed of cascoded MOSFETs.

公开(公告)号：US20230318287A1

公开(公告)日：2023-10-05

申请号：US18207493

申请日：2023-06-08

Applicant: STMicroelectronics International N.V.

Inventor： Radhakrishnan SITHANANDAM

IPC: H02H9/04 ,  H01L23/528 ,  H01L27/02 ,  H01L29/08 ,  H01L27/12 ,  H01L29/78 ,  H01L27/06 ,  H01L29/06 ,  H01L29/739 ,  H01L29/87

CPC classification number: H02H9/046 ,  H01L23/528 ,  H01L27/0266 ,  H01L29/0847 ,  H01L27/1203 ,  H01L27/0255 ,  H01L29/7835 ,  H01L27/0635 ,  H01L29/0649 ,  H01L29/7391 ,  H01L27/0262 ,  H01L29/87 ,  H01L29/73

Abstract: Electrostatic discharge (ESD) protection is provided in circuits which use of a tunneling field effect transistor (TFET) or an impact ionization MOSFET (IMOS). These circuits are supported in silicon on insulator (SOI) and bulk substrate configurations to function as protection diodes, supply clamps, failsafe circuits and cutter cells. Implementations with parasitic bipolar devices provide additional parallel discharge paths.

公开(公告)号：US20190319454A1

公开(公告)日：2019-10-17

申请号：US15952466

申请日：2018-04-13

Applicant: STMicroelectronics International N.V. ,  STMicroelectronics SA

Inventor： Radhakrishnan SITHANANDAM ,  Divya AGARWAL ,  Jean JIMENEZ ,  Malathi KAR

IPC: H02H9/04 ,  H01L27/02 ,  H01L27/07

Abstract: Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit using an ESD event actuated SCR device. The SCR device may include an embedded field effect transistor (FET) having an insulated gate that receives a trigger signal from an ESD detection circuit. The SCR device may alternatively include a variable substrate resistor having an insulated gate that receives a trigger signal from an ESD detection circuit.