公开(公告)号：US08913457B2

公开(公告)日：2014-12-16

申请号：US14271165

申请日：2014-05-06

Applicant: STMicroelectronics International N.V. ,  STMicroelectronics, SA

Inventor： Nishu Kohli ,  Robin M. Wilson

IPC: G11C8/00 ,  G11C8/18

CPC classification number: G11C8/18 ,  G11C7/1072 ,  G11C7/22 ,  G11C7/222

Abstract: Memory circuitry includes memory components operable in response to first edges of an internal clock. The memory circuitry also includes internal clock generating circuitry to generate the internal clock in response to a system clock. The first edges of the internal clock are generated in response to both a rising and a falling edge of the system clock.

Abstract translation: 存储器电路包括响应于内部时钟的第一边缘可操作的存储器组件。 存储电路还包括响应系统时钟产生内部时钟的内部时钟产生电路。 响应于系统时钟的上升沿和下降沿都产生内部时钟的第一个边沿。