公开(公告)号：US12224342B2

公开(公告)日：2025-02-11

申请号：US17694276

申请日：2022-03-14

Applicant: STMicroelectronics Pte Ltd

Inventor： Yean Ching Yong ,  Maurizio Gabriele Castorina ,  Voon Cheng Ngwan ,  Ditto Adnan ,  Fadhillawati Tahir ,  Churn Weng Yim

IPC: H01L29/78 ,  H01L21/764 ,  H01L21/765 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66

Abstract: An integrated circuit transistor device includes a semiconductor substrate providing a drain, a first doped region buried in the semiconductor substrate providing a body and a second doped region in the semiconductor substrate providing a source. A trench extends into the semiconductor substrate and passes through the first and second doped regions. An insulated polygate region within the trench surrounds a polyoxide region that may have void inclusion. The polygate region is formed by a first gate lobe and second gate lobe on opposite sides of the polyoxide region. A pair of gate contacts are provided at each trench. The pair of gate contacts includes: a first gate contact extending into the first gate lobe at a location laterally offset from the void and a second gate contact extending into the second gate lobe at a location laterally offset from the void.