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Patent Agency Ranking
公开(公告)号：US11848378B2
公开(公告)日：2023-12-19
申请号：US17373198
申请日：2021-07-12
Applicant: STMicroelectronics Pte Ltd
Inventor： Ditto Adnan , Maurizio Gabriele Castorina , Voon Cheng Ngwan , Fadhillawati Tahir
IPC: H01L29/78 , H01L21/765 , H01L29/40 , H01L29/66
CPC classification number: H01L29/7813 , H01L21/765 , H01L29/401 , H01L29/407 , H01L29/66734
Abstract: A semiconductor substrate has a trench extending from a front surface and including a lower part and an upper part. A first insulation layer lines the lower part of the trench, and a first conductive material in the lower part is insulated from the semiconductor substrate by the first insulating layer to form a field plate electrode of a transistor. A second insulating layer lines sidewalls of the upper part of said trench. A third insulating layer lines a top surface of the first conductive material at a bottom of the upper part of the trench. A second conductive material fills the upper part of the trench. The second conductive material forms a gate electrode of the transistor that is insulated from the semiconductor substrate by the second insulating layer and further insulated from the first conductive material by the third insulating layer.
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公开(公告)号：US09082681B2
公开(公告)日：2015-07-14
申请号：US13853886
申请日：2013-03-29
Applicant: STMicroelectronics Pte Ltd.
Inventor： Olivier Le Neel , Shian-Yeu Kam , Tien-Choy Loh , Ditto Adnan , Tze Wei Dennis Chew
CPC classification number: H01L25/16 , B81C1/0023 , G01N27/223 , H01L21/56 , H01L21/561 , H01L23/16 , H01L23/3121 , H01L24/32 , H01L24/48 , H01L24/73 , H01L25/00 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/73265 , H01L2224/854 , H01L2924/00014 , H01L2924/181 , H01L2924/1815 , H01L2924/00 , H01L2924/00012 , H01L2224/45099
Abstract: A micro-sensor device that includes a passivation-protected ASIC module and a micro-sensor module bonded to a patterned cap provides protection for signal conditioning circuitry while allowing one or more sensing elements in the micro-sensor module to be exposed to an ambient environment. According to a method of fabricating the micro-sensor device, the patterned cap can be bonded to the micro-sensor module using a planarizing adhesive that is chemically compatible with the sensing elements. In one embodiment, the adhesive material is the same material used for the dielectric active elements, for example, a photo-sensitive polyimide film.
Abstract translation: 包括钝化保护ASIC模块和结合到图案化盖的微传感器模块的微传感器装置为信号调节电路提供保护，同时允许微传感器模块中的一个或多个感测元件暴露于周围环境 。 根据制造微传感器装置的方法，图案化盖可以使用与感测元件化学相容的平面化粘合剂结合到微传感器模块。 在一个实施例中，粘合剂材料是用于介电活性元件的材料，例如光敏聚酰亚胺膜。
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公开(公告)号：US20140291829A1
公开(公告)日：2014-10-02
申请号：US13853886
申请日：2013-03-29
Applicant: STMICROELECTRONICS PTE LTD.
Inventor： Olivier Le Neel , Shian-Yeu Kam , Tien-Choy Loh , Ditto Adnan , Tze Wei Dennis Chew
CPC classification number: H01L25/16 , B81C1/0023 , G01N27/223 , H01L21/56 , H01L21/561 , H01L23/16 , H01L23/3121 , H01L24/32 , H01L24/48 , H01L24/73 , H01L25/00 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48145 , H01L2224/48227 , H01L2224/73265 , H01L2224/854 , H01L2924/00014 , H01L2924/181 , H01L2924/1815 , H01L2924/00 , H01L2924/00012 , H01L2224/45099
Abstract: A micro-sensor device that includes a passivation-protected ASIC module and a micro-sensor module bonded to a patterned cap provides protection for signal conditioning circuitry while allowing one or more sensing elements in the micro-sensor module to be exposed to an ambient environment. According to a method of fabricating the micro-sensor device, the patterned cap can be bonded to the micro-sensor module using a planarizing adhesive that is chemically compatible with the sensing elements. In one embodiment, the adhesive material is the same material used for the dielectric active elements, for example, a photo-sensitive polyimide film.
Abstract translation: 包括钝化保护ASIC模块和结合到图案化盖的微传感器模块的微传感器装置为信号调节电路提供保护，同时允许微传感器模块中的一个或多个感测元件暴露于周围环境 。 根据制造微传感器装置的方法，图案化盖可以使用与感测元件化学相容的平面化粘合剂结合到微传感器模块。 在一个实施例中，粘合剂材料是用于介电活性元件的材料，例如光敏聚酰亚胺膜。
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公开(公告)号：US12224342B2
公开(公告)日：2025-02-11
申请号：US17694276
申请日：2022-03-14
Applicant: STMicroelectronics Pte Ltd
Inventor： Yean Ching Yong , Maurizio Gabriele Castorina , Voon Cheng Ngwan , Ditto Adnan , Fadhillawati Tahir , Churn Weng Yim
IPC: H01L29/78 , H01L21/764 , H01L21/765 , H01L29/06 , H01L29/40 , H01L29/66
Abstract: An integrated circuit transistor device includes a semiconductor substrate providing a drain, a first doped region buried in the semiconductor substrate providing a body and a second doped region in the semiconductor substrate providing a source. A trench extends into the semiconductor substrate and passes through the first and second doped regions. An insulated polygate region within the trench surrounds a polyoxide region that may have void inclusion. The polygate region is formed by a first gate lobe and second gate lobe on opposite sides of the polyoxide region. A pair of gate contacts are provided at each trench. The pair of gate contacts includes: a first gate contact extending into the first gate lobe at a location laterally offset from the void and a second gate contact extending into the second gate lobe at a location laterally offset from the void.
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5.发明授权公开(公告)号：US09091924B2
公开(公告)日：2015-07-28
申请号：US13625210
申请日：2012-09-24
Applicant: STMicroelectronics Pte Ltd.
Inventor： Gino George , KeenYip Koh , CheeChiang Lee , Ditto Adnan
CPC classification number: G03F7/16 , H01L21/6715
Abstract: A photoresist delivery system includes a photoresist pump, a photoresist reservoir coupled to the photoresist pump, and a photoresist container. A control valve is between the photoresist reservoir and the photoresist container and is movable from a closed position to an open position upon engagement of the photoresist container with the photoresist reservoir to replenish photoresist therein.
Abstract translation: 光致抗蚀剂传输系统包括光致抗蚀剂泵，耦合到光致抗蚀剂泵的光致抗蚀剂储存器和光致抗蚀剂容器。 控制阀位于光致抗蚀剂储存器和光致抗蚀剂容器之间，并且在光致抗蚀剂容器与光致抗蚀剂储存器接合时能够从关闭位置移动到打开位置，以补充其中的光致抗蚀剂。
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