公开(公告)号：US20010004550A1

公开(公告)日：2001-06-21

申请号：US09731090

申请日：2000-12-06

Applicant: STMicroelectronics S.A.

Inventor： Gerard Passemard

IPC: H01L021/4763 ,  H01L021/44 ,  H01L021/31 ,  H01L021/469

CPC classification number: H01L21/76832 ,  H01L21/7681 ,  H01L21/76811 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A interconnection structure of the damascene type is produced on a surface of a microelectronic device that includes at least one dielectric material layer for housing at least one interconnection and at least one interface layer on the dielectric material layer. The interface layer may include at least one SiCH layer and at least one SiOCH layer.

Abstract translation: 镶嵌型的互连结构在微电子器件的表面上产生，该微电子器件的表面包括至少一个电介质材料层，用于容纳介电材料层上的至少一个互连和至少一个界面层。 界面层可以包括至少一个SiCH层和至少一个SiOCH层。