公开(公告)号：US20030008486A1

公开(公告)日：2003-01-09

申请号：US10184036

申请日：2002-06-27

Applicant: STMicroelectronics S.A.

Inventor： Thierry Schwartzmann ,  Herve Jaouen

IPC: H01L021/28

CPC classification number: H01L29/66659 ,  H01L29/7835

Abstract: A MOS transistor with a drain extension includes an isolation block on the upper surface of a semiconductor substrate. The isolation block has a first sidewall next to the gate of the transistor, and a second sidewall that is substantially parallel to the first sidewall. The isolation block further includes a drain extension zone in the substrate under the isolation block, and a drain region in contact with the drain extension zone. The drain region is in the substrate but is not covered by the isolation block.

Abstract translation: 具有漏极延伸的MOS晶体管包括在半导体衬底的上表面上的隔离块。 隔离块具有靠近晶体管的栅极的第一侧壁和基本上平行于第一侧壁的第二侧壁。 隔离块还包括在隔离块下方的衬底中的漏极延伸区域和与漏极延伸区域接触的漏极区域。 漏极区在衬底中，但不被隔离块覆盖。

公开(公告)号：US20030042574A1

公开(公告)日：2003-03-06

申请号：US10236082

申请日：2002-09-06

Applicant: STMicroelectronics S.A.

Inventor： Thierry Schwartzmann

IPC: H01L027/082

CPC classification number: H01L29/0821

Abstract: The forming of a contact with a deep region of a first conductivity type formed in a silicon substrate. The contact includes a doped silicon well region of the first conductivity type and an intermediary region connected between the deep layer and the well. This intermediary connection region is located under a trench. The manufacturing method enables forming of vertical devices, in particular fast bipolar transistors.

Abstract translation: 与在硅衬底中形成的第一导电类型的深区形成接触。 该接触包括第一导电类型的掺杂硅阱区域和连接在深层和阱之间的中间区域。 该中间连接区位于沟槽下方。 该制造方法能够形成垂直装置，特别是快速双极晶体管。

公开(公告)号：US20030146468A1

公开(公告)日：2003-08-07

申请号：US10379169

申请日：2003-03-04

Applicant: STMicroelectronics S.A

Inventor： Yvon Gris ,  Thierry Schwartzmann

IPC: H01L029/788

CPC classification number: H01L27/0826 ,  H01L21/761 ,  H01L21/76232 ,  H01L21/82285 ,  H01L21/8249 ,  H01L27/0623

Abstract: A method of manufacturing a bipolar transistor in a P-type substrate, including the steps of forming in the substrate a first N-type area; forming by epitaxy a first silicon layer; forming in this first layer, and substantially above the first area a second heavily-doped P-type area separate from the second area; forming at the periphery of this second area a third N-type area; forming by epitaxy a second silicon layer; forming a deep trench crossing the first and second silicon layers, penetrating into the substrate and laterally separating the second area from the third area; and performing an anneal such that the dopant of the third area is in continuity with that of the first area.

Abstract translation: 一种在P型衬底中制造双极晶体管的方法，包括以下步骤：在衬底中形成第一N型区域; 通过外延形成第一硅层; 在该第一层中形成，并且在第一区域上基本上在第二区域分离第二重掺杂P型区域; 在该第二区域的周围形成第三N型区域; 通过外延形成第二硅层; 形成穿过所述第一和第二硅层的深沟槽，穿过所述衬底并将所述第二区域与所述第三区域横向分开; 以及执行退火，使得第三区域的掺杂剂与第一区域的掺杂剂连续。