公开(公告)号：US20030151949A1

公开(公告)日：2003-08-14

申请号：US10331116

申请日：2002-12-27

Applicant: STMicroelectronics S.r.I.

Inventor： Rino Micheloni ,  Sabina Mognoni ,  Ilaria Motta ,  Andrea Sacco

IPC: G11C011/34

CPC classification number: G11C16/30

Abstract: A method and program-load circuit is for regulating the voltages at the drain and body terminals of a non-volatile memory cell being programmed. These voltages are applied from a program-load circuit connected in a conduction pattern to transfer a predetermined voltage value to at least one terminal of the memory cell. The method includes a step of regulating the voltage value locally, within the program-load circuit, to overcome the effect of a parasitic resistor present in the conduction pattern.

Abstract translation: 一种方法和程序加载电路用于调节正被编程的非易失性存储单元的漏极和体端子处的电压。 这些电压从连接在导通图案中的编程负载电路施加，以将预定的电压值传送到存储单元的至少一个端子。 该方法包括在编程负载电路内局部调节电压值以克服存在于导电图案中的寄生电阻的影响的步骤。