公开(公告)号：US09640614B2

公开(公告)日：2017-05-02

申请号：US14509229

申请日：2014-10-08

申请人： STMicroelectronics S.r.l.

发明人： Alessandro Causio ,  Paolo Colpani ,  Simone Dario Mariani

IPC分类号： H01L29/78 ,  H01L29/51 ,  H01L29/06 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/423 ,  H01L29/66

CPC分类号： H01L29/0653 ,  H01L21/823807 ,  H01L21/823878 ,  H01L27/0922 ,  H01L29/42368 ,  H01L29/66681 ,  H01L29/7816

摘要： An integrated device includes a semiconductor body including an STI insulating structure that laterally delimits first active areas and at least one second active area in a low-voltage region and in a power region of the semiconductor body, respectively. Low-voltage CMOS components are housed in the first active areas. A power component, formed in the second active area, includes a source region, a body region, a drain-contact region, and at least one LOCOS insulation region. The insulating region is arranged between the body region and the drain-contact region and has a prominent portion that emerges from a surface of the semiconductor body, and an embedded portion inside it. The prominent portion of the LOCOS insulation region has a volume greater than that of the embedded portion.

公开(公告)号：US20150054088A1

公开(公告)日：2015-02-26

申请号：US14509229

申请日：2014-10-08

申请人： STMICROELECTRONICS S.R.L.

发明人： Alessandro Causio ,  Paolo Colpani ,  Simone Dario Mariani

IPC分类号： H01L29/06

CPC分类号： H01L29/0653 ,  H01L21/823807 ,  H01L21/823878 ,  H01L27/0922 ,  H01L29/42368 ,  H01L29/66681 ,  H01L29/7816

摘要： An integrated device includes a semiconductor body including an STI insulating structure that laterally delimits first active areas and at least one second active area in a low-voltage region and in a power region of the semiconductor body, respectively. Low-voltage CMOS components are housed in the first active areas. A power component, formed in the second active area, includes a source region, a body region, a drain-contact region, and at least one LOCOS insulation region. The insulating region is arranged between the body region and the drain-contact region and has a prominent portion that emerges from a surface of the semiconductor body, and an embedded portion inside it. The prominent portion of the LOCOS insulation region has a volume greater than that of the embedded portion.

摘要翻译： 集成器件包括分别在半导体本体的低电压区域和功率区域中横向限定第一有源区和至少一个第二有源区的STI绝缘结构的半导体本体。 低压CMOS元件容纳在第一个有源区域中。 形成在第二有源区域中的功率部件包括源极区域，主体区域，漏极接触区域以及至少一个LOCOS绝缘区域。 绝缘区域布置在体区域和漏极 - 接触区域之间，并且具有从半导体主体的表面露出的突出部分和其内部的嵌入部分。 LOCOS绝缘区域的突出部分的体积大于嵌入部分的体积。