Semiconductor device and corresponding method

    公开(公告)号:US11990442B2

    公开(公告)日:2024-05-21

    申请号:US17537112

    申请日:2021-11-29

    IPC分类号: H01L23/00 H01L23/498

    摘要: A semiconductor die is mounted at a die area of a ball grid array package that includes an array of electrically-conductive ball. A power channel conveys a power supply current to the semiconductor die. The power channel is formed by an electrically-conductive connection plane layers extending in a longitudinal direction between a distal end at a periphery of the package and a proximal end at the die area. A distribution of said electrically-conductive balls is made along the longitudinal direction. The electrically-conductive connection plane layer includes subsequent portions in the longitudinal direction between adjacent electrically-conductive balls of the distribution. Respective electrical resistance values of the subsequent portions monotonously decrease from the distal end to the proximal end. A uniform distribution of power supply current over the length of the power channel is thus facilitated.