公开(公告)号：US20040104777A1

公开(公告)日：2004-06-03

申请号：US10723705

申请日：2003-11-26

Applicant: STMicroelectronics S.r.l.

Inventor： Bruno Murari ,  Alessandro Moscatelli ,  Lorenzo Labate

IPC: H03F001/22

CPC classification number: H03F1/223

Abstract: A power amplifier comprising at least a load element and at least an active element inserted, in series to each other, between a first and a second voltage reference is described. Advantageously, according to an embodiment of the invention, the load element comprises a DMOS transistor.

Abstract translation: 描述了功率放大器，其至少包括负载元件和在第一和第二参考电压之间彼此串联插入的至少一个有源元件。 有利地，根据本发明的实施例，负载元件包括DMOS晶体管。

公开(公告)号：US20040056275A1

公开(公告)日：2004-03-25

申请号：US10606660

申请日：2003-06-25

Applicant: STMicroelectronics S.r.l.

Inventor： Bruno Murari ,  Ubaldo Mastromatteo ,  Paolo Ferrari

IPC: H01L031/0328

CPC classification number: G02B27/0994

Abstract: A micromachined device made of semiconductor material is formed by: a semiconductor body; an intermediate layer set on top of the semiconductor body; and a substrate, set on top of the intermediate layer. A cavity extends in the intermediate layer and is delimited laterally by bottom fixed regions, at the top by the substrate, and at the bottom by the semiconductor body. The bottom fixed regions form fixed electrodes, which extend in the intermediate layer towards the inside of the cavity. An oscillating element is formed in the substrate above the cavity and is separated from top fixed regions through trenches, which extend throughout the thickness of the substrate. The oscillating element is formed by an oscillating platform set above the cavity, and by mobile electrodes, which extend towards the top fixed regions in a staggered way with respect to the fixed electrodes. The fixed electrodes and mobile electrodes are thus comb-fingered in plan view but formed on different levels.

Abstract translation: 由半导体材料制成的微机械加工装置由半导体本体形成， 设置在半导体本体顶部的中间层; 以及设置在中间层顶部的基板。 空腔在中间层中延伸并且由底部固定区域在顶部限定，在顶部由衬底限定，并且在底部由半导体本体限定。 底部固定区域形成固定电极，其在中间层中延伸到空腔的内部。 振荡元件形成在空腔上方的衬底中，并且通过沟槽与顶部固定区域分离，其延伸贯穿衬底的厚度。 振荡元件由设置在空腔上方的振荡平台和通过相对于固定电极以交错方式朝着顶部固定区域延伸的移动电极形成。 因此，固定电极和移动电极在平面图中梳理，但形成在不同的水平上。