公开(公告)号：US20210193658A1

公开(公告)日：2021-06-24

申请号：US17124671

申请日：2020-12-17

Applicant: STMicroelectronics S.r.l.

Inventor： Andrea PALEARI ,  Simone Dario MARIANI ,  Irene BALDI ,  Daniela BRAZZELLI ,  Alessandra Piera MERLINI

IPC: H01L27/092 ,  H01L21/762

Abstract: An integrated device includes a deep plug. The deep plug is formed by a deep trench extending in a semiconductor body from a shallow surface of a shallow trench isolation. A trench contact makes contact with a conductive filler of the deep trench through the shallow trench at its shallow surface. A system includes at least one integrated device with the deep plug. Moreover, a corresponding process for manufacturing this integrated device includes steps for forming and filling the deep trench before forming the shallow trench isolation and trench window through which the trench contact extends to make contact with the conductive filler. The semiconductor body has a thickness, and the deep trench extends into the semiconductor body less than the thickness.