公开(公告)号：US20140008722A1

公开(公告)日：2014-01-09

申请号：US13927600

申请日：2013-06-26

Applicant: STMicroelectronics S.r.l.

Inventor： Simone Dario MARIANI ,  Daniele MERLINI ,  Fabrizio Fausto Renzo TOIA

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/7827 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7813

Abstract: An embodiment of a vertical-gate transistor disposed on a die includes a first substrate portion of a first conductivity and a second substrate portion of a second conductivity. The die includes front and rear surfaces, the first portion extending from the front surface and the second portion extending from the rear surface to the first portion, at least one drain region of the second conductivity extending from the rear surface, and at least one cell. Each cell includes a source region of the second conductivity extending from the front surface, a conductive gate region extending from the front surface to a gate depth, a conductive field-plate region extending from the front surface to a field depth, a gate-insulating layer that insulates the gate region, and a plate-insulating layer that insulates the field-plate region. An intermediate insulating layer insulates the gate region from the field-plate region.

Abstract translation: 设置在管芯上的垂直栅极晶体管的实施例包括具有第一导电性的第一衬底部分和具有第二导电性的第二衬底部分。 模具包括前表面和后表面，第一部分从前表面延伸，第二部分从后表面延伸到第一部分，从后表面延伸的至少一个第二导电漏极区域和至少一个电池单元 。 每个单元包括从前表面延伸的第二导电的源极区域，从前表面延伸到栅极深度的导电栅极区域，从前表面延伸到场深度的导电场板区域，栅极绝缘 使栅极区域绝缘的层，以及使场板区域绝缘的板绝缘层。 中间绝缘层使栅极区域与场板区域绝缘。