公开(公告)号：US20150140767A1

公开(公告)日：2015-05-21

申请号：US14606165

申请日：2015-01-27

Applicant: STMicroelectronics S.r.l.

Inventor： Giuseppe Croce ,  Paolo Gattari ,  Andrea Paleari ,  Alessandro Dundulachi

IPC: H01L29/66

CPC classification number: H01L29/66659 ,  H01L29/42368 ,  H01L29/7835

Abstract: A MOS transistor for power applications is formed in a substrate of semiconductor material by a method integrated in a process for manufacturing integrated circuits which uses an STI technique for forming insulating regions. The method includes the phases of forming an insulating element on a top surface of the substrate and forming a control electrode on a free surface of the insulating element. The insulating element insulates the control electrode from the substrate. The insulating element includes a first portion and a second portion. The extension of the first portion along a first direction perpendicular to the top surface is lower than the extension of the second portion along such first direction. The phase of forming the insulating element includes generating the second portion by locally oxidizing the top surface.

Abstract translation: 用于功率应用的MOS晶体管通过集成在用于形成绝缘区域的STI技术的集成电路的制造工艺中的方法形成在半导体材料的衬底中。 该方法包括在基板的顶表面上形成绝缘元件并在绝缘元件的自由表面上形成控制电极的阶段。 绝缘元件使控制电极与衬底绝缘。 绝缘元件包括第一部分和第二部分。 第一部分沿着垂直于顶面的第一方向的延伸比沿第一方向的第二部分的延伸小。 形成绝缘元件的相包括通过局部氧化顶表面来产生第二部分。

公开(公告)号：US09299610B2

公开(公告)日：2016-03-29

申请号：US14714738

申请日：2015-05-18

Applicant: STMicroelectronics S.r.l.

Inventor： Andrea Paleari ,  Giuseppe Croce

IPC: H01L21/768 ,  H01L29/66 ,  H01L29/78 ,  H01L29/417 ,  H01L29/10 ,  H01L21/74 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L21/76895 ,  H01L21/743 ,  H01L21/76897 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/1095 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/41775 ,  H01L29/42368 ,  H01L29/66477 ,  H01L29/66696 ,  H01L29/66704 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/7825

Abstract: A MOS transistor includes a semiconductor layer with a drain region and a body region. A first insulating layer is disposed over the semiconductor layer, a gate-precursor layer is disposed over the first insulating layer, a second insulating layer disposed over the first insulating layer and a third insulating layer disposed over the second insulating layer. A source opening extends through the third insulating layer, the second insulating layer, the gate-precursor layer, and the first insulating layer. An implant through the source opening forms a source-precursor region in the semiconductor layer. The source opening is then lined and an body contact opening is made through the liner, the source-precursor region and into the body region. An implant through the body contact opening forms the body contact region below the source-precursor. The body contact opening is then filled with a metal.

Abstract translation: MOS晶体管包括具有漏极区域和体区域的半导体层。 第一绝缘层设置在半导体层之上，栅极前体层设置在第一绝缘层之上，第二绝缘层设置在第一绝缘层上，第三绝缘层设置在第二绝缘层上。 源极开口延伸穿过第三绝缘层，第二绝缘层，栅极 - 前体层和第一绝缘层。 通过源极开口的植入物在半导体层中形成源极 - 前体区域。 然后排出源开口，并且通过衬垫，源 - 前体区域并进入体区域中制造体接触开口。 通过身体接触开口的植入物形成源 - 前体下方的身体接触区域。 然后用金属填充身体接触开口。

公开(公告)号：US20150255341A1

公开(公告)日：2015-09-10

申请号：US14714738

申请日：2015-05-18

Applicant: STMicroelectronics S.r.l.

Inventor： Andrea Paleari ,  Giuseppe Croce

IPC: H01L21/768 ,  H01L29/66

CPC classification number: H01L21/76895 ,  H01L21/743 ,  H01L21/76897 ,  H01L21/823418 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/1095 ,  H01L29/41758 ,  H01L29/41766 ,  H01L29/41775 ,  H01L29/42368 ,  H01L29/66477 ,  H01L29/66696 ,  H01L29/66704 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/7825

Abstract: A MOS transistor includes a semiconductor layer with a drain region and a body region. A first insulating layer is disposed over the semiconductor layer, a gate-precursor layer is disposed over the first insulating layer, a second insulating layer disposed over the first insulating layer and a third insulating layer disposed over the second insulating layer. A source opening extends through the third insulating layer, the second insulating layer, the gate-precursor layer, and the first insulating layer. An implant through the source opening forms a source-precursor region in the semiconductor layer. The source opening is then lined and an body contact opening is made through the liner, the source-precursor region and into the body region. An implant through the body contact opening forms the body contact region below the source-precursor. The body contact opening is then filled with a metal.

Abstract translation: MOS晶体管包括具有漏极区域和体区域的半导体层。 第一绝缘层设置在半导体层之上，栅极前体层设置在第一绝缘层之上，第二绝缘层设置在第一绝缘层上，第三绝缘层设置在第二绝缘层上。 源极开口延伸穿过第三绝缘层，第二绝缘层，栅极 - 前体层和第一绝缘层。 通过源极开口的植入物在半导体层中形成源极 - 前体区域。 然后排出源开口，并且通过衬垫，源 - 前体区域并进入体区域中制造体接触开口。 通过身体接触开口的植入物形成源 - 前体下方的身体接触区域。 然后用金属填充身体接触开口。