Non volatile memory device with an asymmetric row decoder and method for selecting word lines

    公开(公告)号:US11380380B2

    公开(公告)日:2022-07-05

    申请号:US17088060

    申请日:2020-11-03

    Abstract: A non-volatile memory device including an array of memory cells coupled to word lines and a row decoder, which includes a first and a second pull-down stage, which are arranged on opposite sides of the array, and include, respectively, for each word line, a corresponding first pull-down switching circuit and a corresponding second pull-down switching circuit, which are coupled to a first point and a second point, respectively, of the first word line. The row decoder moreover comprises a pull-up stage, which includes, for each word line, a corresponding pull-up switching circuit, which can be electronically controlled in order to: couple the first point to a supply node in the step of deselection of the word line; and decouple the first point from the supply node in the step of selection of the word line.

    NON VOLATILE MEMORY DEVICE WITH AN ASYMMETRIC ROW DECODER AND METHOD FOR SELECTING WORD LINES

    公开(公告)号:US20210166745A1

    公开(公告)日:2021-06-03

    申请号:US17088060

    申请日:2020-11-03

    Abstract: A non-volatile memory device including an array of memory cells coupled to word lines and a row decoder, which includes a first and a second pull-down stage, which are arranged on opposite sides of the array, and include, respectively, for each word line, a corresponding first pull-down switching circuit and a corresponding second pull-down switching circuit, which are coupled to a first point and a second point, respectively, of the first word line. The row decoder moreover comprises a pull-up stage, which includes, for each word line, a corresponding pull-up switching circuit, which can be electronically controlled in order to: couple the first point to a supply node in the step of deselection of the word line; and decouple the first point from the supply node in the step of selection of the word line.

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