公开(公告)号：US20220119245A1

公开(公告)日：2022-04-21

申请号：US17499297

申请日：2021-10-12

Applicant: STMicroelectronics S.r.l.

Inventor： Nicolo' BONI ,  Lorenzo VINCIGUERRA ,  Roberto CARMINATI ,  Massimiliano MERLI

IPC: B81B3/00 ,  B81C1/00

Abstract: A MEMS device is formed by a body of semiconductor material which defines a support structure. A pass-through cavity in the body is surrounded by the support structure. A movable structure is suspended in the pass-through cavity. An elastic structure extends in the pass-through cavity between the support structure and the movable structure. The elastic structure has a first and second portions and is subject, in use, to mechanical stress. The MEMS device is further formed by a metal region, which extends on the first portion of the elastic structure, and by a buried cavity in the elastic structure. The buried cavity extends between the first and the second portions of the elastic structure.

公开(公告)号：US20240425359A1

公开(公告)日：2024-12-26

申请号：US18828564

申请日：2024-09-09

Applicant: STMicroelectronics S.r.l.

Inventor： Nicolo' BONI ,  Lorenzo VINCIGUERRA ,  Roberto CARMINATI ,  Massimiliano MERLI

IPC: B81B3/00 ,  B81C1/00

Abstract: A MEMS device is formed by a body of semiconductor material which defines a support structure. A pass-through cavity in the body is surrounded by the support structure. A movable structure is suspended in the pass-through cavity. An elastic structure extends in the pass-through cavity between the support structure and the movable structure. The elastic structure has a first and second portions and is subject, in use, to mechanical stress. The MEMS device is further formed by a metal region, which extends on the first portion of the elastic structure, and by a buried cavity in the elastic structure. The buried cavity extends between the first and the second portions of the elastic structure and communicates laterally with the pass-through cavity.

公开(公告)号：US20200369029A1

公开(公告)日：2020-11-26

申请号：US16879269

申请日：2020-05-20

Applicant: STMicroelectronics S.r.l.

Inventor： Davide ASSANELLI ,  Irene MARTINI ,  Lorenzo VINCIGUERRA ,  Carla Maria LAZZARI ,  Paolo FERRARINI

IPC: B41J2/14 ,  H01L41/047 ,  H01L41/053 ,  H01L41/09 ,  H01L41/187 ,  H01L41/23 ,  H01L41/29 ,  H01L41/332

Abstract: A piezoelectric transducer includes a semiconductor body with a bottom electrode of conductive material. A piezoelectric element is on the bottom electrode. A first protective layer, on the bottom electrode and the piezoelectric element, has a first opening through which a portion of the piezoelectric element is exposed, and a second opening through which a portion of the bottom electrode is exposed. A conductive layer on the first protective layer and within the first and second openings is patterned to form a top electrode in electrical contact with the piezoelectric element at the first opening, a first biasing stripe in electrical contact with the top electrode, and a second biasing stripe in electrical contact with the bottom electrode at the second opening.