公开(公告)号：US20030034827A1

公开(公告)日：2003-02-20

申请号：US10162135

申请日：2002-06-03

Applicant: STMicroelectronics S.r.l.

Inventor： Mauro Pagliato ,  Paolo Rolandi ,  Giorgio Oddone ,  Marco Fontana

IPC: G05F003/02

CPC classification number: H02M3/073 ,  H02M2003/077

Abstract: The voltage applied to the gate terminals of the charging transistors and charge-transfer transistors of two parallel pumping branches forming a charge pump is a boosted voltage generated internally and supplied in a crosswise manner. In particular, for driving the charge pump, first and second driving signals are generated respectively for the first and for the second pumping branch via a first and respectively a second driving circuit; the first and second driving signals are also supplied respectively to a first and to a second auxiliary charge pump to obtain respectively first and second voltage-boosted signals; and the first and second boosted voltages are respectively supplied to the second and to the first driving circuit.