公开(公告)号：US20130200484A1

公开(公告)日：2013-08-08

申请号：US13684057

申请日：2012-11-21

Applicant: STMicroelectronics S.r.l.

Inventor： Flavio VILLA ,  Gabriele BARLOCCHI ,  Pietro CORONA

IPC: H01L21/762 ,  H01L29/06

CPC classification number: H01L21/76283 ,  H01L21/3003 ,  H01L21/3247 ,  H01L21/76289 ,  H01L21/764 ,  H01L29/0649 ,  Y10S438/967

Abstract: A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the structures through a thermal process; and completely oxidizing the structures.

Abstract translation: 一种制造SOI晶片的方法，包括以下步骤：在半导体材料的晶片中形成限定半导体材料结构的空腔; 通过热过程稀释结构; 并完全氧化结构。