公开(公告)号：US20030219924A1

公开(公告)日：2003-11-27

申请号：US10313991

申请日：2002-12-05

Applicant: STMicroelectronics S.r.l. ,  OVONYX Inc.

Inventor： Roberto Bez ,  Fabio Pellizzer ,  Caterina Riva ,  Romina Zonca

IPC: H01L021/06 ,  H01L021/4763

CPC classification number: G11C13/0004 ,  H01L27/2445 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1691 ,  Y10S438/947

Abstract: A contact structure, including a first conducting region having a first thin portion with a first sublithographic dimension in a first direction; a second conducting region having a second thin portion with a second sublithographic dimension in a second direction transverse to said first direction; the first and second thin portions being in direct electrical contact and defining a contact area having a sublithographic extension. The thin portions are obtained using deposition instead of lithography: the first thin portion is deposed on a wall of an opening in a first dielectric layer; the second thin portion is obtained by deposing a sacrificial region on vertical wall of a first delimitation layer, deposing a second delimitation layer on the free side of the sacrificial region, removing the sacrificial region to form a sublithographic opening that is used to etch a mold opening in a mold layer and filling the mold opening.

Abstract translation: 一种接触结构，包括：第一导电区域，具有在第一方向上具有第一亚光刻尺寸的第一薄部分; 第二导电区域，具有第二薄部分，具有横向于所述第一方向的第二方向的第二亚光刻尺寸; 第一和第二薄部分直接电接触并且限定具有亚光刻延伸部的接触区域。 使用沉积代替光刻获得薄部分：第一薄部分被放置在第一介电层中的开口的壁上; 通过在第一限定层的垂直壁上去除牺牲区域，在牺牲区域的自由侧上取代第二限定层，去除牺牲区域以形成用于蚀刻模具的亚光刻开口来获得第二薄部分 在模具层中开口并填充模具开口。