公开(公告)号：US09847349B1

公开(公告)日：2017-12-19

申请号：US15463493

申请日：2017-03-20

Applicant: STMicroelectronics SA

Inventor： Augustin Monroy Aguirre ,  Guillaume Bertrand ,  Philippe Cathelin ,  Raphael Paulin

IPC: H01L27/12 ,  H01L29/08 ,  H01L29/45 ,  H01L23/528 ,  H01L29/06 ,  H01L29/10

CPC classification number: H01L27/1203 ,  H01L23/528 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/1079 ,  H01L29/1095 ,  H01L29/456 ,  H01L29/78615

Abstract: An integrated electronic device is supported by a substrate of a silicon on insulator type. At least one transistor is formed in and on a semiconductor film of the substrate. The transistor includes a drain region and a source region of a first conductivity type and a substrate (body) region of a second conductivity type lying under a gate region. An extension region laterally continues the substrate (body) region beyond the source and drain regions and borders, in contact with, the source region through a border region having the first conductivity type. This supports formation of an electrical connection of the source region and the substrate (body) region.