公开(公告)号：US10262898B2

公开(公告)日：2019-04-16

申请号：US15093416

申请日：2016-04-07

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： Didier Dutartre ,  Jean-Pierre Carrere ,  Jean-Luc Huguenin ,  Clement Pribat ,  Sarah Kuster

IPC: H01L21/768 ,  H01L21/82 ,  H01L27/12 ,  H01L29/70 ,  H01L27/082 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/84 ,  H01L21/762 ,  H01L21/02

Abstract: A silicon on insulator substrate includes a semiconductor bulk handle wafer, an insulating layer on said semiconductor bulk handle wafer and a semiconductor film on said insulating layer. An opening extends completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer. Epitaxial material fills the opening and extends on said semiconductor film, with the epitaxial material and semiconductor film forming a thick semiconductor film. A trench isolation surrounds a region of the thick semiconductor film to define an electrical contact made to the semiconductor bulk handle wafer through the opening.

公开(公告)号：US10978340B2

公开(公告)日：2021-04-13

申请号：US16384147

申请日：2019-04-15

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

Inventor： Didier Dutartre ,  Jean-Pierre Carrere ,  Jean-Luc Huguenin ,  Clement Pribat ,  Sarah Kuster

IPC: H01L27/12 ,  H01L27/146 ,  H01L27/06 ,  H01L27/07 ,  H01L29/06 ,  H01L29/10 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/84 ,  H01L21/762 ,  H01L21/74 ,  H01L21/02

Abstract: A silicon on insulator substrate includes a semiconductor bulk handle wafer, an insulating layer on said semiconductor bulk handle wafer and a semiconductor film on said insulating layer. An opening extends completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer. Epitaxial material fills the opening and extends on said semiconductor film, with the epitaxial material and semiconductor film forming a thick semiconductor film. A trench isolation surrounds a region of the thick semiconductor film to define an electrical contact made to the semiconductor bulk handle wafer through the opening.

公开(公告)号：US20170294379A1

公开(公告)日：2017-10-12

申请号：US15093416

申请日：2016-04-07

Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

Inventor： Didier Dutartre ,  Jean-Pierre Carrere ,  Jean-Luc Huguenin ,  Clement Pribat ,  Sarah Kuster

IPC: H01L23/522 ,  H01L23/532 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/84 ,  H01L29/06 ,  H01L27/12

CPC classification number: H01L21/76877 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/7624 ,  H01L21/823475 ,  H01L21/84 ,  H01L27/1207 ,  H01L29/0649

Abstract: A silicon on insulator substrate includes a semiconductor bulk handle wafer, an insulating layer on said semiconductor bulk handle wafer and a semiconductor film on said insulating layer. An opening extends completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer. Epitaxial material fills the opening and extends on said semiconductor film, with the epitaxial material and semiconductor film forming a thick semiconductor film. A trench isolation surrounds a region of the thick semiconductor film to define an electrical contact made to the semiconductor bulk handle wafer through the opening.

公开(公告)号：US11562927B2

公开(公告)日：2023-01-24

申请号：US17228164

申请日：2021-04-12

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Didier Dutartre ,  Jean-Pierre Carrere ,  Jean-Luc Huguenin ,  Clement Pribat ,  Sarah Kuster

IPC: H01L21/768 ,  H01L21/82 ,  H01L21/84 ,  H01L21/762 ,  H01L21/74 ,  H01L21/02 ,  H01L29/06 ,  H01L27/12 ,  H01L21/8234

Abstract: A silicon on insulator substrate includes a semiconductor bulk handle wafer, an insulating layer on said semiconductor bulk handle wafer and a semiconductor film on said insulating layer. An opening extends completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer. Epitaxial material fills the opening and extends on said semiconductor film, with the epitaxial material and semiconductor film forming a thick semiconductor film. A trench isolation surrounds a region of the thick semiconductor film to define an electrical contact made to the semiconductor bulk handle wafer through the opening.